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BC856A 반도체 회로 부품 판매점

General Purpose Transistor PNP



SeCoS 로고
SeCoS
BC856A 데이터시트, 핀배열, 회로
Elektronische Bauelemente
BC856A, B
BC857A, B, C
BC858A, B, C
FEATURES
A suffix of "-C" specifies halogen & lead-free
n General Purpose Transistor PNP Type
n Collect current : - 0.1A
n Operating Temp. : -55OC ~ +150 OC
n RoHS compliant product
A
L
3
Top View
12
BS
C OLLE C TOR
3
1
B AS E
3
1
2
V
D
G
C
H
K
2
E MITTE R
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
J
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
ELECTRICAL CHARACTERISTICS˄Tamb=25ć unless otherwise specified˅
Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BC856
BC857
BC858
BC856
BC857
BC858
VCBO Ic= -10­Aˈ I E=0
VCEO Ic= -10 mAˈ IB=0
-80
-50
-30
-65
-45
-30
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
BC856
BC857
BC858
BC856
BC857
BC858
VEBO
ICBO
ICEO
IE= -10 ­Aˈ IC=0
VCB= -70 V ,
VCB= -45 V ,
VCB= -25 V ,
VCE= -60 V ,
VCE= -40 V ,
VCE= -25 V ,
IE=0
IE=0
IE=0
IB=0
IB=0
IB=0
-5
Emitter cut-off current
IEBO V EB= -5 V , IC=0
DC current gain
BC856A,857A,858A
BC856B,857B,858B
BC857C,BC858C
HFE˄1˅
VCE= -5V, IC= -2mA
125
220
420
Collector-emitter saturation voltage
VCE(sat) IC=-100mA, IB= -5 mA
MAX UNIT
V
V
V
-0.1 ­A
-0.1 ­A
-0.1
250
475
800
-0.5
­A
V
Base-emitter saturation voltage
VBE(sat) IC= -100 mA, IB= -5mA
-1.1
Transition frequency
DEVICE MARKING
VCE= -5 V, IC= -10mA
fT 100
f=100MHz
BC856A=3A; BC856B=3B; BC857A=3E; BC857B=3F; BC857C=3G; BC858A=3J; BC858B=3K; BC858C=3L
V
MHz
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
Page 1 of 3


BC856A 데이터시트, 핀배열, 회로
Elektronische Bauelemente
BC856A, B
BC857A, B, C
BC858A, B, C
Typical Characteristics
BC857, BC858
2.0
1.5 VCE = −10 V
TA = 25°C
1.0
0.7
0.5
0.3
0.2
−0.2
−0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
−1.0
−0.9 TA = 25°C
−0.8
VBE(sat) @ IC/IB = 10
−0.7
−0.6 VBE(on) @ VCE = −10 V
−0.5
−0.4
−0.3
−0.2
−0.1 VCE(sat) @ IC/IB = 10
0
−0.1 −0.2
−0.5 −1.0 −2.0 −5.0 −10 −20
IC, COLLECTOR CURRENT (mAdc)
−50 −100
Figure 2. “Saturation” and “On” Voltages
−2.0
TA = 25°C
−1.6
−1.2
−0.8
IC =
−10 mA
−0.4
IC = −50 mA
IC = −20 mA
IC = −200 mA
IC = −100 mA
0
−0.02
−0.1 −1.0
IB, BASE CURRENT (mA)
−10 −20
Figure 3. Collector Saturation Region
1.0
−55°C to +125°C
1.2
1.6
2.0
2.4
2.8
−0.2 −1.0
−10
IC, COLLECTOR CURRENT (mA)
−100
Figure 4. Base-Emitter Temperature Coefficient
10
Cib
7.0
TA = 25°C
5.0
3.0 Cob
2.0
1.0
−0.4 −0.6
−1.0 −2.0 −4.0 −6.0 −10
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
−20 −30 −40
400
300
200
150 VCE = −10 V
TA = 25°C
100
80
60
40
30
20
−0.5 −1.0 −2.0 −3.0 −5.0
−10 −20 −30 −50
IC, COLLECTOR CURRENT (mAdc)
Figure 6. Current-Gain - Bandwidth Product
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
Page 2 of 3




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