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Taiwan Semiconductor |
BC856A/B, BC857A/B/C, BC858A/B/C
200mW, PNP Small Signal Transistor
Small Signal Product
Features
◇ Epitaxial planar die construction
◇ Surface device type mounting
◇ Moisture sensitivity level 1
◇ Matte Tin(Sn) lead finish with Nickel(Ni) underplate
◇ Pb free version and RoHS compliant
◇ Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
SOT-23
Mechanical Data
◇ Case : SOT- 23 small outline plastic package
◇ Terminal : Matte tin plated, lead free, solderable
per MIL-STD-202, method 208 guaranteed
◇ High temperature soldering guaranteed : 260°C/10s
◇ Weight : 0.008 grams (approximately)
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Parameter
Symbol
Power Dissipation
PD
BC856
Collector-Base Voltage
BC857
VCBO
BC858
BC856
Collector-Emitter Voltage
BC857
VCEO
BC858
Emitter-Base Voltage
VEBO
Collector Current
IC
Junction and Storage Temperature Range
TJ , TSTG
Notes : 1. Valid provided that electrodes are kept at ambient temperature
Value
200
-80
-50
-30
-65
-45
-30
-5
-0.1
-55 to + 150
Units
mW
V
V
V
A
°C
Version : F14
Small Signal Product
Electrical Characteristics ( TA= 25oC unless otherwise noted )
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Parameter
BC856
BC857
BC858
BC856
BC857
BC858
BC856
BC857
BC858
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC857C, BC858C
VCE= -5V
IC= -10μA
IE= 0
IC= -10mA
IB= 0
IE= -1μA
VCB= -70V
VCB= -45V
VCB= -25V
VEB= -5V
IC= 0
IE= 0
IC=0
VCE= -5V
IC= -2mA
IC= -100mA
IC= -100mA
IC= -10mA
IB= -5mA
IB= -5mA
f= 100MHz
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Min
-80
-50
-30
-65
-45
-30
-5
-
-
-
-
125
220
420
-
-
100
Max Units
-V
-
-
-100
-100
-100
-0.1
250
475
800
-0.65
-1.1
-
V
V
nA
μA
V
V
MHz
Version : F14
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