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CEB03N8 반도체 회로 부품 판매점

N-Channel Enhancement Mode Field Effect Transistor



CET 로고
CET
CEB03N8 데이터시트, 핀배열, 회로
CEP03N8/CEB03N8
CEF03N8
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP03N8
CEB03N8
CEF03N8
VDSS
800V
800V
800V
RDS(ON)
4.8
4.8
4.8
ID @VGS
3A 10V
3A 10V
3A d 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
DG
GS
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Tc = 25 C unless otherwise noted
Symbol
Limit
TO-220/263
VDS 800
VGS ±30
ID
3
2
IDM e
12
125
PD
0.8
TO-220F
3d
2d
12 d
47
0.3
Single Pulsed Avalanche Energy h
EAS 32
Single Pulsed Avalanche Current h
IAS 3
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.2
62.5
3.2
62.5
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2012.July
http://www.cet-mos.com


CEB03N8 데이터시트, 핀배열, 회로
CEP03N8/CEB03N8
CEF03N8
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 800V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
800
1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 1.5A
2
4
3.8 4.8
V
Gate input resistance
Rg f=1MHz,open Drain
3.3
Dynamic Characteristics c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
690
70
pF
pF
Crss 15 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 450V, ID = 2.2A,
VGS = 10V, RGEN = 25
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 720V, ID = 2.2A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
20 40 ns
34 68 ns
44 88 ns
28 56 ns
16 20 nC
3 nC
7 nC
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 3A
Reverse Recovery Time
Trr ID = 5A, di/dt = 100A/us
Reverse Recovery Charge
Qrr ID = 5A, di/dt = 100A/us
3A
1.2 V
429 ns
1.3 nC
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
h.L = 7mH, IAS =3A, VDD = 50V, RG = 25, Starting TJ = 25 C
2




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CEB03N8 transistor

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CEB03N8

N-Channel Enhancement Mode Field Effect Transistor - CET