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Infineon Technologies |
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS C6
600V CoolMOS™ C6 Power Transistor
IPx60R099C6
Data Sheet
www.DataSRheeetv4.U2.c.o1m, 2010-02-09
Final
Industrial & Multimarket
600V CoolMOS™ C6 Power Transistor
1 Description
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle
and pioneered by Infineon Technologies. CoolMOS™ C6 series
combines the experience of the leading SJ MOSFET supplier with
high class innovation. The offered devices provide all benefits of a
fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching
applications even more efficient, more compact, lighter, and cooler.
Features
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• JEDEC1) qualified, Pb-free plating, Halogen free
Applications
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom, UPS and Solar.
IPA60R099C6, IPB60R099C6
IPP60R099C6 IPW60R099C6
drain
pin 2
gate
pin 1
source
pin 3
Please note: For MOSFET paralleling the use of ferrite beads on
the gate or separate totem poles is generally recommended.
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
Qg,typ
ID,pulse
Eoss @ 400V
Body diode di/dt
650
0.099
119
112
9.3
300
V
nC
A
µJ
A/µs
Type / Ordering Code
www.DIPaWtaS6h0eRe0t49U9.Cco6m
IPB60R099C6
IPP60R099C6
IPA60R099C6
Package
PG-TO247
PG-TO263
PG-TO220
PG-TO220 FullPAK
1) J-STD20 and JESD22
Final Data Sheet
2
Marking
6R099C6
Related Links
IFX C6 Product Brief
IFX C6 Portfolio
IFX CoolMOS Webpage
IFX Design tools
Rev. 2.1, 2010-02-09
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