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FSB749 반도체 회로 부품 판매점

PNP Low Saturation Transistor



Fairchild Semiconductor 로고
Fairchild Semiconductor
FSB749 데이터시트, 핀배열, 회로
FSB749
C
E
B
SuperSOTTM-3
PNP Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A
continuous. Sourced from Process PC.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
FSB749
VCEO
Collector-Emitter Voltage
25
VCBO
VEBO
Collector-Base Voltage
Emitter-Base Voltage
35
5
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
3
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Units
V
V
V
A
°C
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
RθJA
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Max
FSB749
500
250
Units
mW
°C/W
© 1999 Fairchild Semiconductor Corporation
fsb749.lwpPrPC revA


FSB749 데이터시트, 핀배열, 회로
PNP Low Saturation Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
BVCEO Collector-Emitter Breakdown Voltage
BVCBO Collector-Base Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC = 10 mA
IC = 100 µA
IE = 100 µA
VCB = 30 V
VCB = 30 V, TA=100°C
VEB = 4V
25 V
35 V
5V
100 nA
10 uA
100 nA
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat)
VBE(on)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 50 mA, VCE = 2 V
IC = 1 A, VCE = 2 V
IC = 2 A, VCE = 2 V
IC = 6 A, VCE = 2 V
IC = 1 A, IB = 100 mA
IC = 3 A, IB = 300 mA
IC = 1 A, IB = 100 mA
IC = 1 A, VCE = 2 V
70 -
100 300
75
15
300 mV
600
1.25 V
1V
SMALL SIGNAL CHARACTERISTICS
Cobo
fT
Output Capacitance
Transition Frequency
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
VCB = 10 V, IE = 0, f = 1MHz
100 pF
IC = 100 mA,VCE = 5 V, f=100MHz 100
-
© 1999 Fairchild Semiconductor Corporation
fsb749.lwpPrPC revA




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FSB749 transistor

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PNP Low Saturation Transistor - Fairchild Semiconductor