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KEC |
SEMICONDUCTOR
TECHNICAL DATA
INDUSTRIAL USE.
GENERAL PURPOSE APPLICATION.
FEATURES
Low Collector Saturation Voltage
: VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A.
Complementary to KTC2026.
KTA1046
EPITAXIAL PLANAR PNP TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
VCBO
VCEO
VEBO
IC
IB
Collector Power
Dissipation
Ta=25
Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
-60
-60
-7
-3
-0.5
2
20
150
-55 150
UNIT
V
V
V
A
A
W
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
V(BR)CEO
hFE(1) (Note)
hFE(2)
VCE(sat)
VBE
fT
Cob
VCB=-60V, IE=0
VEB=-7V, IC=0
IC=-50mA, IB=0
VCE=-5V, IC=-0.5A
VCE=-5V, IC=-3A
IC=-2A, IB=-0.2A
VCE=-5V, IC=-0.5A
VCE=-5V, IC=-0.5A
VCB=-10V, IE=0, f=1MHz
Turn-on Time
ton
Switching Time
Storage Time
tstg
Fall Time
tf
Note : hFE(1) Classification Y:100 200, GR:150 300
2011. 7. 13
Revision No : 4
MIN.
-
-
-60
100
20
-
-
-
-
TYP.
-
-
-
-
-
-0.25
-0.7
30
45
MAX.
-1
-1
-
300
-
-1.0
-1.0
-
-
UNIT
A
A
V
V
V
MHz
pF
- 0.4 -
- 1.7 -
S
- 0.5 -
1/2
KTA1046
2011. 7. 13
Revision No : 4
2/2
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