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Leshan Radio Company |
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L8550PLT1G
s-L8550PLT1G
85P
3000/Tape&Reel
L8550PLT3G
s-L8550PLT3G
85P
10000/Tape&Reel
L8550QLT1G
s-L8550QLT1G
1YD
3000/Tape&Reel
L8550QLT3G
L8550RLT1G
s-L8550QLT3G
s-L8550RLT1G
1YD
1YF
10000/Tape&Reel
3000/Tape&Reel
L8550RLT3G
s-L8550RLT3G
1YF
10000/Tape&Reel
L8550SLT1G
s-L8550SLT1G
1YH
3000/Tape&Reel
L8550SLT3G
s-L8550SLT3G
1YH
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base voltage
Emitter-base Voltage
Collector current-continuoun
Symbol
V CEO
V CBO
V EBO
IC
Value
-25
-40
-5
-800
Unit
V
V
V
mAdc
THERMALCHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board (1)
T A = 25 °C
Derate above 25 °C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25 °C
Derate above 25 °C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol Max
Unit
PD
225 mW
1.8 mW /°C
R θJA
556 °C/W
PD
300 mW
2.4 mW /°C
R θJA
417 °C/W
T J , T stg -55 to +150 °C
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
L8550PLT1G
Series
S-L8550PLT1G
Series
3
1
2
SOT– 23
COLLECTOR
3
1
BASE
2
EMITTER
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
L8550PLT1G
Series
S-L8550PLT1G
Series
ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted)
Characteristic
OFFCHARACTERISTICS
Collector-Emitter Breakdown Voltage
(I C =-1.0mA)
Emitter-Base Breakdown Voltage
(I E = -100 µA)
Collector-Base Breakdown voltage
(I C= -100 µA)
Collector Cutoff Current
(VCB = -35 V)
Emitter Cutoff Current
(VEB = -4V)
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
V (BR)CEO
V (BR)EBO
V (BR)CBO
I CBO
I EBO
ON CHARACTERISTICS
Characteristic
DC Current Gain
(I C =-100mA, VCE=-1V)
Collector-Emitter Saturation Voltage
(I C =-800mA, IB=-80mA)
Symbol
H FE
VCE(S)
Min
-25
-5
-40
–
–
Min
100
–
Typ Max
Unit
––
––
––
– -150
– -150
V
V
V
nA
nA
Typ Max
– 600
– -0.5
Unit
V
NOTE:
*P Q R S
hFE
100~200
150~300
200~400
300~600
Rev.O 2/4
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