파트넘버.co.kr L8550RLT1G 데이터시트 PDF


L8550RLT1G 반도체 회로 부품 판매점

General Purpose Transistors



Leshan Radio Company 로고
Leshan Radio Company
L8550RLT1G 데이터시트, 핀배열, 회로
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L8550PLT1G
s-L8550PLT1G
85P
3000/Tape&Reel
L8550PLT3G
s-L8550PLT3G
85P
10000/Tape&Reel
L8550QLT1G
s-L8550QLT1G
1YD
3000/Tape&Reel
L8550QLT3G
L8550RLT1G
s-L8550QLT3G
s-L8550RLT1G
1YD
1YF
10000/Tape&Reel
3000/Tape&Reel
L8550RLT3G
s-L8550RLT3G
1YF
10000/Tape&Reel
L8550SLT1G
s-L8550SLT1G
1YH
3000/Tape&Reel
L8550SLT3G
s-L8550SLT3G
1YH
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base voltage
Emitter-base Voltage
Collector current-continuoun
Symbol
V CEO
V CBO
V EBO
IC
Value
-25
-40
-5
-800
Unit
V
V
V
mAdc
THERMALCHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board (1)
T A = 25 °C
Derate above 25 °C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25 °C
Derate above 25 °C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol Max
Unit
PD
225 mW
1.8 mW /°C
R θJA
556 °C/W
PD
300 mW
2.4 mW /°C
R θJA
417 °C/W
T J , T stg -55 to +150 °C
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
L8550PLT1G
Series
S-L8550PLT1G
Series
3
1
2
SOT– 23
COLLECTOR
3
1
BASE
2
EMITTER
Rev.O 1/4


L8550RLT1G 데이터시트, 핀배열, 회로
LESHAN RADIO COMPANY, LTD.
L8550PLT1G
Series
S-L8550PLT1G
Series
ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted)
Characteristic
OFFCHARACTERISTICS
Collector-Emitter Breakdown Voltage
(I C =-1.0mA)
Emitter-Base Breakdown Voltage
(I E = -100 µA)
Collector-Base Breakdown voltage
(I C= -100 µA)
Collector Cutoff Current
(VCB = -35 V)
Emitter Cutoff Current
(VEB = -4V)
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
V (BR)CEO
V (BR)EBO
V (BR)CBO
I CBO
I EBO
ON CHARACTERISTICS
Characteristic
DC Current Gain
(I C =-100mA, VCE=-1V)
Collector-Emitter Saturation Voltage
(I C =-800mA, IB=-80mA)
Symbol
H FE
VCE(S)
Min
-25
-5
-40
Min
100
Typ Max
Unit
––
––
––
– -150
– -150
V
V
V
nA
nA
Typ Max
– 600
– -0.5
Unit
V
NOTE:
*P Q R S
hFE
100~200
150~300
200~400
300~600
Rev.O 2/4




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L8550RLT1G transistor

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L8550RLT1G

General Purpose Transistors - Leshan Radio Company