파트넘버.co.kr L9013SLT3G 데이터시트 PDF


L9013SLT3G 반도체 회로 부품 판매점

General Purpose Transistors



Leshan Radio Company 로고
Leshan Radio Company
L9013SLT3G 데이터시트, 핀배열, 회로
General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
NPN Silicon
FEATURE
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L9013PLT1G
Series
S-L9013PLT1G
DEVICE MARKING AND ORDERING INFORMATION
Series
Device
L9013PLT1G
S-L9013PLT1G
L9013PLT3G
S-L9013PLT3G
L9013QLT1G
S-L9013QLT1G
L9013QLT3G
S-L9013QLT3G
L9013RLT1G
S-L9013RLT1G
L9013RLT3G
S-L9013RLT3G
L9013SLT1G
S-L9013SLT1G
L9013SLT3G
S-L9013SLT3G
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Marking
13P
13P
13Q
13Q
13R
13R
13S
13S
Symbol
VCEO
VCBO
VEBO
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
Value
20
40
5
Unit
V
V
V
3
1
2
SOT-23 (TO-236AB)
1
BASE
3
COLLECTOR
2
EMITTER
Collector current-continuoun
IC
THERMAL CHARATEERISTICS
500 mAdc
Characteristic
Total Device Dissipation FR-5 Board, (1)
TA=25oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θ JA
PD
R θJA
Tj ,Tstg
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/oC
oC/W
mW
mW/oC
oC/W
oC
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic
Symbol Min Typ
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=1.0mA)
Emitter-Base Breakdown Voltage
(IE=100µA)
Collector-Base Breakdown Voltage
(IC=100µA)
Collector Cutoff Current (VCB=35V)
V(BR)CEO
V(BR)EBO
V(BR)CBO
ICBO
20
5
40
-
-
-
-
-
Emitter Cutoff Current (VEB=4V)
IEBO
Max
-
-
-
150
150
Unit
V
V
V
nA
nA
Rev.O 1/2


L9013SLT3G 데이터시트, 핀배열, 회로
ON CHARACTERISTICS
DC Current Gain
(IC=50mA, VCE=1V)
Collector-Emitter Saturation Voltage
(IC=500mA,IB=50mA)
LESHAN RADIO COMPANY, LTD.
L9013PLT1G Series
S-L9013PLT1G Series
Hfe
VCE(S)
100
-
- 600
- 0.6
V
NOTE:
*
HFE
P
100~200
Q
150~300
R
200~400
S
300~600
SOT-23 (TO-236AB)
A
L
3
BS
12
VG
C
D H KJ
0.037
0.95
NOTES:
1. CONTROLLING DIMENSION: MILLIMETERS
2. LEAD THICKNESS SPECIFIED PER L / F DRAWING WITH
SOLDER PLATING.
INCHES
DIM MIN MAX
A 0.1102 0.1197
B 0.0472 0.0551
C 0.0350 0.0440
D 0.0150 0.0200
G 0.0701 0.0807
H 0.0005 0.0040
J 0.0034 0.0070
K 0.0180 0.0236
L 0.0350 0.0401
S 0.0830 0.0984
V 0.0177 0.0236
MILLIMETERS
MIN MAX
2.80 3.04
1.20 1.40
0.89 1.11
0.37 0.50
1.78 2.04
0.013 0.100
0.085 0.177
0.45 0.60
0.89 1.02
2.10 2.50
0.45 0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.035
0.9
0.079
2.0
0.031
0.8
inches
mm
Rev.O 2/2




PDF 파일 내의 페이지 : 총 2 페이지

제조업체: Leshan Radio Company

( lrc )

L9013SLT3G transistor

데이터시트 다운로드
:

[ L9013SLT3G.PDF ]

[ L9013SLT3G 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


L9013SLT3G

General Purpose Transistors - Leshan Radio Company