파트넘버.co.kr L8050HQLT3G 데이터시트 PDF


L8050HQLT3G 반도체 회로 부품 판매점

General Purpose Transistors



Leshan Radio Company 로고
Leshan Radio Company
L8050HQLT3G 데이터시트, 핀배열, 회로
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
ƽHigh current capacity in compact package.
IC =1.5 A.
ƽEpitaxial planar type.
ƽNPN complement: L8050H
ƽPb-Free Package is available.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L8050HPLT1G
S-L8050HPLT1G 1HA
3000/Tape&Reel
L8050HPLT3G
S-L8050HPLT3G 1HA
10000/Tape&Reel
L8050HQLT1G
S-L8050HQLT1G 1HC
3000/Tape&Reel
L8050HQLT3G
S-L8050HQLT3G 1HC
10000/Tape&Reel
L8050HRLT1G
L8050HRLT3G
L8050HSLT1G
L8050HSLT3G
S-L8050HRLT1G
S-L8050HRLT3G
S-L8050HSLT1G
S-L8050HSLT3G
1HE
1HE
1HG
1HG
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
TA=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
VCEO
VCBO
VEBO
IC
Max
25
40
5
1500
Unit
V
V
V
mAdc
Symbol
PD
R θJ A
PD
R θJ A
T j,T St g
Max
Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
417
-55 to +150
°C/W
°C
L8050HQLTIG
Series
S-L8050HQLTIG
Series
3
1
2
SOT–23
COLLECTOR
3
1
BASE
2
EMITTER
Rev.A 1/3


L8050HQLT3G 데이터시트, 핀배열, 회로
LESHAN RADIO COMPANY, LTD.
L8050HQLTIG
Series
S-L8050HQLTIG
Series
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=1.0mA)
V(BR)CEO
25
Emitter-Base Breakdown Voltage
(IE=100µΑ)
V(BR)EBO
5
Collector-Base Breakdown Voltage
(IC=100µΑ)
V(BR)CBO
40
Collector Cutoff Current (VCB=35V)
ICBO
Emitter Cutoff Current (VEB=4V)
IEBO – –
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
ON CHARACTERISTICS
–V
–V
–V
150 nA
150 nA
Max
Unit
DC Current Gain
IC=100mA,VCE=1V
Collector-Emitter Saturation Voltage
(IC=800mA IB=80mA)
hFE
VCE(S)
100
-
- 600
- 0.5 V
NOTE :
*P
hFE 100~200
Q
150~300
R
200~400
S
300~600
Rev.A 2/3




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L8050HQLT3G transistor

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L8050HQLT3G

General Purpose Transistors - Leshan Radio Company