파트넘버.co.kr L9012RLT3G 데이터시트 PDF


L9012RLT3G 반도체 회로 부품 판매점

General Purpose Transistors



Leshan Radio Company 로고
Leshan Radio Company
L9012RLT3G 데이터시트, 핀배열, 회로
General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
PNP Silicon
FEATURE
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
L9012PLT1G
Series
S-L9012PLT1G
Series
Device
L9012PLT1G
S-L9012PLT1G
L9012PLT3G
S-L9012PLT3G
L9012QLT1G
S-L9012QLT1G
L9012QLT3G
S-L9012QLT3G
L9012RLT1G
S-L9012RLT1G
L9012RLT3G
L9012RLT3G
L9012SLT1G
S-L9012SLT1G
L9012SLT3G
S-L9012SLT3G
Marking
12P
Shipping
3000/Tape&Reel
12P
12Q
10000/Tape&Reel
3000/Tape&Reel
12Q 10000/Tape&Reel
12R 3000/Tape&Reel
12R 10000/Tape&Reel
12S 3000/Tape&Reel
12S 3000/Tape&Reel
12S 10000/Tape&Reel
3
1
2
SOT-23 (TO-236AB)
1
BASE
3
COLLECTOR
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
2
EMITTER
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
VCBO
Emitter-Base Voltage
VEBO
Collector current-continuoun
IC
THERMAL CHARATEERISTICS
-20
-40
-5
-500
V
V
V
mAdc
Characteristic
Total Device Dissipation FR-5 Board, (1)
TA=25oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θ JA
PD
R θJA
Tj ,Tstg
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/oC
oC/W
mW
mW/oC
oC/W
oC
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic
Symbol Min Typ
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=-1.0mA)
Emitter-Base Breakdown Voltage
(IE=-100µ A)
Collector-Base Breakdown Voltage
(IC=-100µ A)
Collector Cutoff Current (VCB=-35V)
V(BR)CEO
V(BR)EBO
V(BR)CBO
I CBO
-20
-5
-40
-
-
-
-
-
Emitter Cutoff Current (VBE=-4V)
IEBO
Max
-
-
-
-150
-150
Unit
V
V
V
nA
nA
Rev.O 1/2


L9012RLT3G 데이터시트, 핀배열, 회로
LESHAN RADIO COMPANY, LTD.
L9012PLT1G Series
S-L9012PLT1G Series
ON CHARACTERISTICS
DC Current Gain
(IC=-50mA, VCE =-1V)
Collector-Emitter Saturation Voltage
(IC=-500mA,I B=-50mA)
H fe
VCE(S)
100
-
-
-
NOTE:
*
HFE
P
QR
S
100~200 150~300 200~400 300~600
600
-0.6
V
SOT-23 (TO-236AB)
A
L
3
BS
12
VG
C
D H KJ
0.037
0.95
NOTES:
1. CONTROLLING DIMENSION: MILLIMETERS
2. LEAD THICKNESS SPECIFIED PER L / F DRAWING WITH
SOLDER PLATING.
INCHES
DIM MIN MAX
A 0.1102 0.1197
B 0.0472 0.0551
C 0.0350 0.0440
D 0.0150 0.0200
G 0.0701 0.0807
H 0.0005 0.0040
J 0.0034 0.0070
K 0.0180 0.0236
L 0.0350 0.0401
S 0.0830 0.0984
V 0.0177 0.0236
MILLIMETERS
MIN MAX
2.80 3.04
1.20 1.40
0.89 1.11
0.37 0.50
1.78 2.04
0.013 0.100
0.085 0.177
0.45 0.60
0.89 1.02
2.10 2.50
0.45 0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.035
0.9
0.079
2.0
0.031
0.8
inches
mm
Rev.O 2/2




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L9012RLT3G transistor

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L9012RLT3G

General Purpose Transistors - Leshan Radio Company



L9012RLT3G

General Purpose Transistors - Leshan Radio Company