|
|
PDF K4091 Data sheet ( Hoja de datos )
| Número de pieza | K4091 | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | Renesas | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de K4091 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4091
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4091 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES
• Low on-state resistance
RDS(on)1 = 13.0 mΩ MAX. (VGS = 10 V, ID = 15 A)
RDS(on)2 = 21 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
• Low gate to drain charge
QGD = 2.2 nC TYP. (VDD = 15 V, ID = 30 A)
• 4.5 V drive available
• Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
2SK4091(1)-S27-AY Note
2SK4091-ZK-E1-AY Note
2SK4091-ZK-E2-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tube 75 p/tube
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode).
PACKAGE
TO-251 (MP-3-b) typ. 0.34 g
TO-252 (MP-3ZK) typ. 0.27 g
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
30
±20
±30
±110
21
1.0
150
−55 to +150
18
32.4
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 0.1 mH
(TO-251)
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18635EJ1V0DS00 (1st edition)
Date Published February 2007 NS CP(K)
Printed in Japan
2007
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
30
25
20 VGS = 4.5 V
15
10
5
0
-75
10 V
ID = 15 A
Pulsed
-25 25
75 125
Tch - Channel Temperature - °C
175
SWITCHING CHARACTERISTICS
100
td(off)
tf
10
td(on)
tr
VDD = 15 V
VGS = 10 V
RG = 3 Ω
1
0.1
1
10
ID - Drain Current - A
100
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100 10 V
10
VGS = 4.5 V
1
0V
0.1
0.01
0
Pulsed
0.5 1 1.5
VF(S-D) – Source to Drain Voltage - V
2SK4091
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1000
Ciss
Coss
100
VGS = 0 V
f = 1 MHz
10
0.1
1
Crss
10 100
VDS - Drain to Source Voltage – V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30
VDD = 24 V
15 V
6V
20
12
10
8
6
VGS
10 4
2
VDS ID = 30 A
00
0 10 20
QG – Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
VGS = 0 V
di/dt = 100 A/μs
1
1
10
IF – Diode Forward Current - A
100
Data Sheet D18635EJ1V0DS
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet K4091.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| K409 | MOSFET ( Transistor ) - 2SK409 |  Hitachi Semiconductor |
| K4090 | MOS FIELD EFFECT TRANSISTOR | Renesas |
| K4091 | MOS FIELD EFFECT TRANSISTOR | Renesas |
| K4092 | MOSFET ( Transistor ) - 2SK4092 |  NEC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |