파트넘버.co.kr L9015SLT1G 데이터시트 PDF


L9015SLT1G 반도체 회로 부품 판매점

General Purpose Transistors



Leshan Radio Company 로고
Leshan Radio Company
L9015SLT1G 데이터시트, 핀배열, 회로
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽComplementary to L9014.
ƽ We declare that the material of product compliance with RoHS requirements.
ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L9015QLT1G
Series
S-L9015QLT1G
Series
DEVICE MARKING AND ORDERING INFORMATION
Device
L9015QLT1G
S-L9015QLT1G
L9015QLT3G
S-L9015QLT3G
L9015RLT1G
S-L9015RLT1G
L9015RLT3G
S-L9015RLT3G
L9015SLT1G
S-L9015SLT1G
L9015SLT3G
S-L9015SLT3G
Marking
15Q
15Q
15R
15R
15S
15S
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current-continuoun
Symbol
VCEO
VCBO
VEBO
IC
Value
-45
-50
-5
-100
Unit
V
V
V
mA
THERMAL CHARATEERISTICS
Characteristic
Total Device Dissipation FR-5 Board.(1)
TA=25oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
PD
RJA
PD
RJA
TJ ,Tstg
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/oC
oC/W
mW
mW/oC
oC/W
oC
3
1
2
SOT– 23
COLLECTOR
3
1
BASE
2
EMITTER
Rev.O 1/4


L9015SLT1G 데이터시트, 핀배열, 회로
LESHAN RADIO COMPANY, LTD.
L9015QLT1G Series
S-L9015QLT1G Series
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
(IC=-1.0mA)
Emitter-Base Breakdown Voltage
(IE=-100µA)
Collector-Base Breakdown Voltage
(IC=-100µA)
Collector Cutoff Current (VCB=-40V)
Emitter Cutoff Current (VEB=-3V)
ON CHARACTERISTICS
DC Current Gain
(IC=-1mA, VCE=-5V)
Collector-Emitter Saturation Voltage
(IC=-100mA,IB=-5mA)
Symbol
V(BR)CEO
V(BR)EBO
V(BR)CBO
I CBO
I EBO
Min
-45
-5
-50
-
Typ
-
-
-
-
H FE
V CE
150
-
-
-
NOTE:
*
QR
S
HFE 150~300 200~400 300~600
Max
-
-
-
-100
-100
600
-0.3
Unit
V
V
V
nA
nA
V
Rev.O 2/4




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L9015SLT1G transistor

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L9015SLT1G

General Purpose Transistors - Leshan Radio Company