파트넘버.co.kr BCP53 데이터시트 PDF


BCP53 반도체 회로 부품 판매점

PNP Silicon Epitaxial Transistors



ON Semiconductor 로고
ON Semiconductor
BCP53 데이터시트, 핀배열, 회로
BCP53 Series
PNP Silicon
Epitaxial Transistors
This PNP Silicon Epitaxial transistor is designed for use in audio
amplifier applications. The device is housed in the SOT−223 package
which is designed for medium power surface mount applications.
High Current
NPN Complement is BCP56
The SOT−223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering,
eliminating the possibility of damage to the die
Device Marking:
BCP53T1G = AH
BCP53−10T1G = AH−10
BCP53−16T1G = AH−16
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Total Power Dissipation
@ TA = 25°C (Note 1)
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
−80
−100
−5.0
1.5
1.5
12
Vdc
Vdc
Vdc
Adc
W
mW/°C
Operating and Storage
Temperature Range
TJ, Tstg −65 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
(Surface Mounted)
Lead Temperature for Soldering,
0.0625from case
Time in Solder Bath
Symbol
RqJA
TL
Max
83.3
260
10
Unit
°C/W
°C
s
© Semiconductor Components Industries, LLC, 2014
October, 2014 − Rev. 11
1
http://onsemi.com
MEDIUM POWER HIGH
CURRENT SURFACE MOUNT
PNP TRANSISTORS
COLLECTOR 2, 4
1
BASE
EMITTER 3
4
12 3
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
AYW
XXXXXG
G
1
A = Assembly Location
Y = Year
W = Work Week
XXXXX = Specific Device Code
G = Pb−Free Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
BCP53T1G
SBCP53−10T1G
BCP53−10T1G
SBCP53−10T1G
BCP53−16T1G
SBCP53−16T1G
BCP53−16T3G
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
1000/Tape & Reel
1000/Tape & Reel
1000/Tape & Reel
1000/Tape & Reel
1000/Tape & Reel
1000/Tape & Reel
4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BCP53T1/D


BCP53 데이터시트, 핀배열, 회로
BCP53 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector−Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
V(BR)CBO
−100
Vdc
Collector−Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
− 80
Vdc
Collector−Emitter Breakdown Voltage
(IC = −100 mAdc, RBE = 1.0 kW)
V(BR)CER
−100
Vdc
Emitter−Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
− 5.0
Vdc
Collector−Base Cutoff Current
(VCB = − 30 Vdc, IE = 0)
ICBO
nAdc
− −100
Emitter−Base Cutoff Current
(VEB = − 5.0 Vdc, IC = 0)
IEBO
mAdc
− −10
ON CHARACTERISTICS
DC Current Gain
(IC = − 5.0 mAdc, VCE = − 2.0 Vdc)
All Part Types
(IC = −150 mAdc, VCE = − 2.0 Vdc)
BCP53, SBCP53
BCP53−10, SBCP53−10
BCP53−16, SBCP53−16
(IC = − 500 mAdc, VCE = − 2.0 Vdc)
All Part Types
hFE
25 −
40 − 250
63 − 160
100 − 250
25 −
Collector−Emitter Saturation Voltage
(IC = − 500 mAdc, IB = − 50 mAdc)
VCE(sat)
Vdc
− −0.5
Base−Emitter On Voltage
(IC = − 500 mAdc, VCE = − 2.0 Vdc)
VBE(on)
Vdc
− −1.0
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mAdc, VCE = − 5.0 Vdc, f = 35 MHz)
fT MHz
− 50 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
http://onsemi.com
2




PDF 파일 내의 페이지 : 총 5 페이지

제조업체: ON Semiconductor

( onsemi )

BCP53 transistor

데이터시트 다운로드
:

[ BCP53.PDF ]

[ BCP53 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


BCP51

PNP medium power transistors - NXP Semiconductors



BCP51

PNP Silicon AF Transistors (For AF driver and output stages High collector current) - Siemens Semiconductor Group



BCP51

PNP Silicon AF Transistors - Infineon Technologies AG



BCP51

Surface mount Si-Epitaxial PlanarTransistors - Diotec Semiconductor



BCP51

PNP General Purpose Amplifier - Fairchild Semiconductor



BCP51

PNP MEDIUM POWER TRANSISTORS - Diodes



BCP51-10

PNP Silicon AF Transistors (For AF driver and output stages High collector current) - Siemens Semiconductor Group



BCP51-10

PNP Silicon AF Transistors - Infineon Technologies AG



BCP51-16

PNP medium power transistors - NXP Semiconductors