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PDF IXBL64N250 Data sheet ( Hoja de datos )
| Número de pieza | IXBL64N250 | |
| Descripción | Monolithic Bipolar MOS Transistor | |
| Fabricantes | IXYS Corporation | |
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Advance Technical Information
High Voltage, High Gain
BiMOSFETTM
Monolithic Bipolar
MOS Transistor
IXBL64N250
VCES
IC110
VCE(sat)
=
=
≤
2500V
46A
3.0V
(Electrically Isolated Tab)
ISOPLUS i5-PakTM
Symbol
VCES
VCGR
VGES
VGEM
IC25
IICCM110
SSOA
(RBSOA)
T(SSCC SOA)
PC
TJ
TJM
Tstg
TL
TSOLD
VISOL
FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
2500
2500
±25
±35
V
V
V
V
TC = 25°C
TTCC
= 110°C
= 25°C, 1ms
VGE= 15V, TVJ = 125°C, RG = 1Ω
Clamped Inductive Load
VRGGE
=
=
51Ω5V, ,VTCEJ
= 125°C
= 1250V,
Non-Repetitive
TC = 25°C
116
46
750
ICM = 160
VCE < 0.8 • VCES
10
500
-55 ... +150
150
-55 ... +150
A
A
A
A
μs
W
°C
°C
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
300 °C
260 °C
50/60Hz, 1 minute
2500
V~
Mounting Force with Clip
30..170 / 7..36 Nm/lb-in.
8g
GE
C
Isolated Tab
G = Gate
E = Emitter
C = Collector
Features
z Silicon Chip on Direct-Copper Bond
(DCB) Substrate
z Isolated Mounting Surface
z 2500V∼ Electrical Isolation
z High Blocking Voltage
z Low Switching Losses
z High Current Handling Capability
z Anti-Parallel Diode
Advantages
z High Power Density
z Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 1mA, VGE = 0V
VGE(th)
IC = 4mA, VCE = VGE
ICES VCE = 0.8 • VCES, VGE = 0V
Note 2, TJ = 125°C
IGES VCE = 0V, VGE = ± 25V
VCE(sat)
IC = 64A, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
2500
V
3.0 5.0 V
50 μA
6 mA
±200 nA
2.5 3.0 V
3.1 V
Applications
z Switch-Mode and Resonant-Mode
Power Supplies
z Uninterrupted Power Supplies (UPS)
z Capacitor Discharge Circuits
z Laser Generators
© 2010 IXYS CORPORATION, All Rights Reserved
DS100259(04/10)
1 page  
IXBL64N250
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
650
600 RG = 1Ω , VGE = 15V
VCE = 1250V
550
500
I C = 256A, 128A, 64A
450
400
350
300
250
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
800
750 t r
td(on) - - - -
TJ = 125ºC, VGE = 15V
700 VCE = 1250V
650 I C = 256A
600
I C = 128A
550 I C = 64A
80
75
70
65
60
55
500 50
450 45
1 2 3 4 5 6 7 8 9 10
RG - Ohms
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
350
320 t f td(off) - - - -
RG = 1Ω, VGE = 15V
290 VCE = 1250V
260
290
270
250
230
230 210
200 TJ = 125ºC, 25ºC
170
190
170
140 150
60 80 100 120 140 160 180 200 220 240 260
IC - Amperes
650
600
550
500
450
400
350
300
250
200
60
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
RG = 1Ω , VGE = 15V
VCE = 1250V
TJ = 125ºC
TJ = 25ºC
80 100 120 140 160 180 200 220 240
IC - Amperes
260
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
260 300
250
I C = 64A
285
240
t f td(off) - - - -
230 RG = 1Ω, VGE = 15V
220 VCE = 1250V
210
270
255
240
225
200
I C = 128A, 256A
210
190 195
180 180
170 165
160 150
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
400 700
350
I C = 64A, 128A, 256A
300
600
500
250 400
200 300
150
t f td(off) - - - -
200
100
TJ = 125ºC, VGE = 15V
100
VCE = 1250V
50 0
1 2 3 4 5 6 7 8 9 10
RG - Ohms
© 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: B_64N250(9P)4-05-10-A
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXBL64N250.PDF ] | |
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