2DD1664R 반도체 회로 부품 판매점
32V NPN SUFACE MOUNT TRANSISTOR
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 Diodes |
Features
• BVCEO > 32V
• Max Continuous Current IC = 1A
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (2DB1132)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
2DD1664P/Q/R
32V NPN SUFACE MOUNT TRANSISTOR IN SOT89
Mechanical Data
• Case: SOT89
• Case Material: Molded Plastic. “Green” Molding Compound.
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish
• Weight: 0.055 grams (Approximate)
SOT89
C
B
Top View
E
Device Symbol
Pin Out – Top View
Ordering Information (Note 4)
Product
2DD1664P-13
2DD1664Q-13
2DD1664R-13
Marking
N13P
N13Q
N13R
Reel size (inches)
13
13
13
Tape width (mm)
12
12
12
Quantity per reel
2,500
2,500
2,500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com
Marking Information
YWW
N13x
N13x = Product Type Marking Code:
Where N13P = 2DD1664P
N13Q = 2DD1664Q
N13R = 2DD1664R
YWW = Date Code Marking
Y = Last digit of year ex: 1 = 2011
WW = Week code (01 – 53)
2DD1664P/Q/R
Document number: DS31143 Rev. 5 - 2
1 of 6
www.diodes.com
July 2012
© Diodes Incorporated
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current (Note 6)
Symbol
VCBO
VCEO
VEBO
IC
ICM
2DD1664P/Q/R
Value
40
32
6
1
2
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Leads (Note 7)
Operating and Storage Temperature Range
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
1
125
22
-55 to +150
Unit
W
°C/W
°C/W
°C
Notes:
5. For a device surface mounted on FR-4 PCB with minimum suggested pad layout; high coverage of single sided 1 oz copper, in still air conditions
6. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Power Dissipation vs. Ambient Temperature
2DD1664P/Q/R
Document number: DS31143 Rev. 5 - 2
2 of 6
www.diodes.com
July 2012
© Diodes Incorporated
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2DD1664R transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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