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KEC |
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
FEATURES
ᴌHigh Voltage : BC546 VCEO=65V.
ᴌFor Complementary With PNP Type BC556/557/558.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Collector-Base
Voltage
BC546
BC547
BC548
Collector-Emitter
Voltage
BC546
BC547
BC548
Emitter-Base
Voltage
BC546
BC547
BC548
BC546
Collector Current
BC547
BC548
BC546
Emitter Current
BC547
BC548
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
RATING
80
50
30
65
45
30
6
6
5
100
100
100
-100
-100
-100
625
150
-55ᴕ150
UNIT
V
V
V
mA
mA
mW
ᴱ
ᴱ
BC546/7/8
EPITAXIAL PLANAR NPN TRANSISTOR
BC
K
E
G
D
H
FF
1 23
N DIM MILLIMETERS
A 4.70 MAX
B 4.80 MAX
C 3.70 MAX
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
J 14.00 +_0.50
K 0.55 MAX
L 2.30
M 0.45 MAX
N 1.00
1. COLLECTOR
2. BASE
3. EMITTER
TO-92
1998. 10. 8
Revision No : 3
1/3
BC546/7/8
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
BC546
ICBO
DC Current Gain (Note)
BC547
BC548
hFE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
VCE(sat)
VBE(sat)
VBE(ON)1
VBE(ON)2
fT
Cob
Noise Figure
NF
TEST CONDITION
VCB=30V, IE=0
VCE=5V, IC=2mA
IC=100mA, IB=5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA
VCE=5V, IC=10mA, f=100MHz
VCB=10V, f=1MHz, IE=0
VCE=6V, IC=0.1mA
Rg=10kή, f=1kHz
MIN.
-
110
110
110
-
-
0.58
-
-
-
TYP.
-
-
-
-
-
0.9
-
-
150
-
MAX.
15
450
800
800
0.6
1.1
0.7
0.75
-
4.5
UNIT
nA
V
V
V
V
MHz
pF
- 1.0 10 dB
NOTE : According to the value of hFE the BC546, BC547, BC548 are classified as follows.
CLASSIFICATION
none
A
BC546
110ᴕ450
110ᴕ220
hFE
BC547
110ᴕ800
110ᴕ220
BC548
110ᴕ800
110ᴕ220
B
200ᴕ450
200ᴕ450
200ᴕ450
C
-
420ᴕ800
420ᴕ800
1998. 10. 8
Revision No : 3
2/3
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