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KP-1608P1C 반도체 회로 부품 판매점

PHOTOTRANSISTOR



Kingbright Corporation 로고
Kingbright Corporation
KP-1608P1C 데이터시트, 핀배열, 회로
1.6X0.8mm PHOTOTRANSISTOR
Part Number: KP-1608P1C
Features
z 1.6mmX0.8mm SMT LED, 1.1mm thickness.
z Mechanically and spectrally matched to infrared emitting
LED lamp.
z Water clear lens.
z Package: 2000pcs / reel.
z Moisture sensitivity level : level 3.
z RoHS compliant.
Description
Made with silicon phototransistor chips.
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches).
2.Tolerance is ±0.1(0.004") unless otherwise noted
3.The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice.
4.The device has a single mounting surface. The device must be mounted according to the specifications.
SPEC NO: DSAD0327
APPROVED: WYNEC
REV NO: V.9
CHECKED: Allen Liu
DATE: APR/21/2010
DRAWN: F.F.ZHou
PAGE: 1 OF 4
ERP: 1203000037


KP-1608P1C 데이터시트, 핀배열, 회로
Electrical / Optical Characteristics at TA=25°C
Symbol
Parameter
Min.
VBR CEO
Collector-to-Emitter Breakdown Voltage
30
VBR ECO
Emitter-to-Collector Breakdown Voltage
5
VCE (SAT)
Collector-to-Emitter Saturation Voltage
I CEO
TR
TF
Collector Dark Current
Rise Time (10to 90% )
Fall Time (90to 10% )
I (ON)
On State Collector Current
0.1
2θ1/2
Viewing Angle
Typ.
15
15
0.3
120
Max.
0.8
100
Units
V
V
V
nA
us
us
mA
deg
Test Conditions
IC=100uA
Ee=0mW/c
IE=100uA
Ee=0mW/c
IC=2mA
Ee=20mW/c
VCE=10V
Ee=0mW/c
VCE = 5V
IC=1mA
RL=1000
VCE = 5V
Ee=1mW/c
λ=940nm
Absolute Maximum Ratings at TA=25°C
Parameter
Collector-to-Emitter Voltage
Emitter-to-Collector Voltage
Power Dissipation at (or below) 25°C Free Air Temperature
Operating Temperature
Storage Temperature
Max.Ratings
30V
5V
100mW
-40°C To +85°C
-40°C To +85°C
SPEC NO: DSAD0327
APPROVED: WYNEC
REV NO: V.9
CHECKED: Allen Liu
DATE: APR/21/2010
DRAWN: F.F.ZHou
PAGE: 2 OF 4
ERP: 1203000037




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KP-1608P1C transistor

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