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SavantIC |
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3039
DESCRIPTION
·With TO-220C package
·High breakdown voltage (VCBO 500V).
·Fast switching speed.
·Wide area of safe operation
APPLICATIONS
·400V/7A switching regulator applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
IC Collector current (DC)
ICM Collector current-peak
IB Base current
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
500
400
7
7
14
3
1.75
50
150
-50~150
UNIT
V
V
V
A
A
A
W
SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=;
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.8A
ICBO Collector cut-off current
VCB=400V ;IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.8A ; VCE=5V
hFE-2
DC current gain
IC=4A ; VCE=5V
fT Transition frequency
IC=0.8A ; VCE=10V
Cob Collector output capacitance
f=1MHz ; VCB=10V
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=5A, IB1=1A
IB2=-1A; VCC=200V
RL=40C
hFE-1 classifications
LM
N
15-30
20-40
30-50
Product Specification
2SC3039
MIN TYP. MAX UNIT
400 V
500 V
7V
1.0 V
1.5 V
10 µA
10 µA
15 50
8
20 MHz
80 pF
1.0 µs
2.5 µs
1.0 µs
2
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