파트넘버.co.kr KTD2499 데이터시트 PDF


KTD2499 반도체 회로 부품 판매점

Triple Diffused NPN Transistor



KEC 로고
KEC
KTD2499 데이터시트, 핀배열, 회로
SEMICONDUCTOR
TECHNICAL DATA
KTD2499
TRIPLE DIFFUSED NPN TRANSISTOR
COLOR TV HORIZONTAL OUTPUT APPLICATION.
FEATURES
High Voltage : VCBO 1500V.
Low Saturation Voltage :VCE(sat)=5V(Max.) (IC=4A, IB=0.8A).
High Speed : tf=0.3 S(Typ.)
Built-in Damper Diode.
Collector Metal (Fin) is Fully Covered with Mold Resin.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
Icp
IB
PC
Tj
Tstg
RATING
1500
600
5
6
12
3
50
150
-55 150
UNIT
V
V
V
A
A
W
DIM MILLIMETERS
A
U
C
R
WW
A
B
C
D
16.30 MAX
12.00+_ 0.30
5.50+_ 0.20
1.20 MAX
E 8.00
V F 5.00
G 17.00+_ 0.30
H 0.60+0.15/-0.10
I 2.50
M
NK
I
J 20.0+_ 0.1
K 4.00
D L 2.00
M 2.20 MAX
N 3.05 MAX
HO
5.45
OO
P 3.50
Q 1.00
R 3.00+_ 0.20
123
S 37.0
T 42.0
U Φ3.40+0.15/-0.10
V 10
1. BASE
W8
2. COLLECTOR
3. EMITTER
TO-3P(H)IS
EQUIVALENT CIRCUIT
COLLECTOR
BASE
50(TYP.) EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Forward Voltage (Damper Diode)
Transition Frequency
Collector Output Capacitance
Switching Time
Storage Time
Fall Time
ICBO
IEBO
VEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
-VF
fT
Cob
tstg
tf
TEST CONDITION
VCB=1500V, IE=0
VEB=5V, IC=0
IE=400mA, IC=0
VCE=5V, IC=1A
VCE=5V, IC=4A
IC=4A, IB=0.8A
IC=4A, IB=0.8A
IF=6A
VCE=10V, IC=0.1A
VCB=10V, IE=0, f=1MHz
ICP=4A, IB1(end)=0.8A
fH=15.75kHz
MIN.
-
67
5
8
5
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
0.9
1.6
2
95
7.5
0.3
MAX.
1
200
-
25
9
5
1.2
2.0
-
-
10
0.6
UNIT
mA
mA
V
V
V
V
MHz
pF
S
1996. 2. 9
Revision No : 1
1/2


KTD2499 데이터시트, 핀배열, 회로
KTD2499
I C - VCE
8 COMMON EMITTER
Tc=25 C
6
1.6A
1.4A
1.2A
1.0A
0.8A
4 0.6A
0.4A
2
0.2A
I B=0.1A
0
0 2 4 6 8 10 12
COLLECTOR-EMITTER VOLTAGE VCE (V)
h FE - I C
100 COMMON EMITTER
VCE =5V
30
10
3
T
=10T0=C25 C
T =-25
C
1
0.01
0.03 0.1 0.3
1
3
COLLECTOR CURRENT I C (A)
10
I C - V BE
6
COMMON EMITTER
5 VCE=5V
4
3
2
1
0
0 0.2 0.4 0.6 1 0.8 1.0 1.2 .4
BASE-EMITTER VOLTAGE VBE (V)
PC - TC
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160
CASE TEMPERATURE Tc ( C)
1996. 2. 9
Revision No : 1
r th - t w
Tc=25 C (INFINITE HEAT SINK)
CURVE SHOULD BE APPLIED IN THERMAL LIMITED AREA
30 (SINGLE NONREPETITIVE PULSE)
10
1
0.1
0.01
1ms
10ms 0.1 1 10 100
PULSE WIDTH t w (s)
1k
SAFE OPERATING AREA
50
30
IC MAX. (PULSED)
IC MAX. (PULSED)
10 I
3
1
CMAX. (CONTINTUD=O2CU5OSCP)ER10A0TmI1Os0Nms
1ms 100µs
10µs
0.3
0.1
30m
10m
SINGLE NONREPETITIVE PULSE
Tc=25 C
CURVES MUST BE DERATED LINEARLY
WITH INCREASE IN TEMPERATURE.
1 3 10 30 100 300 1k
COLLECTOR-EMITTER VOLTAGE VCE (V)
2/2




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KTD2499 transistor

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