KTD2092 반도체 회로 부품 판매점
EPITAXIAL PLANAR NPN TRANSISTOR
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 KEC |
SEMICONDUCTOR
TECHNICAL DATA
KTD2092
EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
ᴌHigh hFE : hFE=500ᴕ1500 (IC=0.5A).
ᴌLow Collector Saturation :VCE(sat)=0.35V(Max.) (IC=1A).
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
VCBO
VCEO
VEBO
IC
ICP
IB
Collector Power
Dissipation
Ta=25ᴱ
Tc=25ᴱ
Junction Temperature
PC
Tj
Storage Temperature Range
Tstg
RATING
100
80
7
3
5
1
2
25
150
-55ᴕ150
UNIT
V
V
V
A
A
W
ᴱ
ᴱ
A
U
E
LL
M
DD
NN
T
T
123
C
DIM MILLIMETERS
A 10.30 MAX
B 15.30 MAX
C 2.70Ź0.30
S D 0.85 MAX
E Ѹ3.20Ź0.20
F 3.00Ź0.30
G 12.30 MAX
T
RH
0.75 MAX
J 13.60Ź0.50
K 3.90 MAX
L 1.20
VM
N
1.30
2.54
O 4.50Ź0.20
P 6.80
Q 2.60Ź0.20
HR
S
10Ɓ
25Ş
T 5Ş
U 0.5
V 2.60Ź0.15
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
EQUIVALENT CIRCUIT
COLLECTOR
BASE
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Emitter Forward Voltage
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
V(BR)CEO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VECF
fT
Cob
Turn-on Time
ton
Switching Time
Storage Time
Tstg
Fall Time
tf
TEST CONDITION
VCB=80V, IE=0
VEB=7V, IC=0
IC=50mA, IB=0
VCE=1V, IC=0.5A
VCE=1V, IC=1A
IC=1A, IB=0.01A
IC=1A, IB=0.01A
IE=3A, IB=0
VCE=5V, IC=1A
VCE=10V, IE=0, f=1MHz
20µsec
INPUT
IB1
0 IB2
IB1
IB2
IB1=-I B2 =10mA
DUTY CYCLE < 1%
OUTPUT
VCC =30V
MIN.
-
-
80
500
150
-
-
-
-
-
-
-
-
EMITTER
TYP.
-
-
-
-
-
-
-
-
140
30
MAX.
10
10
-
1500
-
0.35
1.2
2.5
-
-
UNIT
ỌA
ỌA
V
V
V
V
MHz
pF
0.5 -
5.0 - ỌS
0.7 -
1996. 11. 28
Revision No : 2
1/2
KTD2092
I C - VCE
2.8 20 10
2.4
2.0
4 COMMON
EMITTER
Ta=25 C
2
1.6 1.4
1.2 1
0.8 0.5
0.4 IB =0.2mA
00
0 2 4 6 8 10 12 14 16
COLLECTOR-EMITTER VOLTAGE VCE (V)
h FE - IC
3k COMMON EMITTER
Tc=25 C
1k VCE =5V
500
300 VCE =2V
100 VCE =1V
50
0.05 0.1
0.3
1
35
COLLECTOR CURRENT I C (A)
10
h FE - I C
3k
Tc=100 C
1k Tc=25 C
Tc=-55 C
500
COMMON EMITTER
V CE =1V
300
VCE =2V
VCE =1V
VCE =5V
100
50
0.05 0.1
0.3
1
35
COLLECTOR CURRENT I C (A)
10
VCE(sat) - I C
3
COMMON EMITTER
IC/I B=100
1
0.5
0.3 Tc=100 C
0.1
0.05
Tc=25 C
Tc=-55 C
0.02
0.05 0.1
0.3
1
35
COLLECTOR CURRENT IC (A)
10
r th - t w
CURVES SHOULD BE APPLIED IN
THERMAL LIMITED AREA. COMMON
EMITTER(SINGLE NONREPETITIVE PULSE)
(1) NO HEAT SINK
100 (2) INFINITE HEAT SINK (Tc=25 C)
(1)
10
(2)
1
0.1
0.001 0.01 0.1 1 10 100
PULSE WIDTH t w (S)
1k
1996. 11. 28
Revision No : 2
SAFE OPERATING AREA
20
10
5 I C MAX.(PULSED)
3 I C MAX.
(CONTINUOUS)
1
0.5
0.3
0.1
0.05
0.02
1
SINGLE NONREPETIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
3 10 30
100 200
COLLECTOR-EMITTER VOLTAGE VCE (V)
2/2
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KTD2092 transistor
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