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Número de pieza | B1685 | |
Descripción | Silicon PNP Epitaxial Planar Transistor | |
Fabricantes | Sanken Electric | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de B1685 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
No Preview Available ! Darlington
2SB1685
(70Ω) E
B
Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2641) Application : Audio, Series Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
sElectrical Characteristics
(Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Ratings
–110
–110
–5
–6
–1
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Conditions
VCB=–110V
VEB=–5V
IC=–30mA
VCE=–4V, IC=–5A
IC=–5A, IB=–5mA
IC=–5A, IB=–5mA
VCE=–12V, IE=0.5A
VCB=–10V, f=1MHz
Ratings
–100max
–100max
–110min
5000min∗
–2.5max
–3.0max
100typ
110typ
Unit
µA
µA
V
V
V
MHz
pF
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
IB2 ton tstg tf
(V) (Ω)
(A)
(V)
(V)
(mA)
(mA)
(µs)
(µs)
(µs)
–30 6
–5 –10 5
–5
5 1.1typ 3.2typ 1.1typ
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
4.8±0.2
2.0±0.1
a ø3.2±0.1
b
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
5.45±0.1
5.45±0.1
BCE
1.4
Weight : Approx 6.0g
a. Part No.
b. Lot No.
I C– V CE Characteristics (Typical)
–6
– 1 m––A00. .54mmAA
–0.3mA
–0.2mA
–4
IB=–0.1mA
–2
V CE( s a t ) – I B Characteristics (Typical)
–3
I C– V BE Temperature Characteristics (Typical)
(VCE=–4V)
–6
–2 –4
–5A
IC=–3A
–1 –2
0
0 –2 –4 –6
Collector-Emitter Voltage VCE(V)
0
–0.1
–0.5 –1
–5 –10
Base Current IB(mA)
–50 –100
0
0 –1 –2 –3
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
50000
(VCE=–4V)
10000
5000
h FE– I C Temperature Characteristics (Typical)
50000
(VCE=–4V)
125˚C
10000
5000
25˚C
–30˚C
θ j-a– t Characteristics
5
1000
500
100
–0.01
–0.05 –0.1
–0.5 –1
Collector Current IC(A)
1000
500
–5 –6
100
–0.01
–0.05 –0.1
–0.5 –1
Collector Current IC(A)
1
–5 –6
0.5
1
5 10
50 100
Time t(ms)
500 1000 2000
f T– I E Characteristics (Typical)
(VCE=–12V)
120
Typ
100
80
60
40
20
0
0.02
0.05 0.1
0.5 1
Emitter Current IE(A)
56
56
Safe Operating Area (Single Pulse)
–20
–10
–5
–1
–0.5
1
DC
0
0
10ms
ms
–0.1 Without Heatsink
Natural Cooling
–0.05
–5
–10 –50 –100
Collector-Emitter Voltage VCE(V)
–200
Pc–Ta Derating
60
40
20
Without Heatsink
3.5
0
0 25 50
75
100 125
Ambient Temperature Ta(˚C)
150
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet B1685.PDF ] |
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