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ROHM Semiconductor |
DTA013Z series
PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
Parameter
VCC
IC(MAX.)
R1
R2
Value
-50V
-100mA
1.0kΩ
10kΩ
lFeatures
1) Built-In Biasing Resistors, R1 = 1kΩ,
R2 = 10kΩ
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit) .
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set
for operation, making the circuit design easy.
5) Complementary NPN Types: DTC013Z series
6) Lead Free/RoHS Compliant.
lOutline
VMT3
EMT3F
DTA013ZM
DTA013ZEB
(SC-105AA)
(SC-89)
UMT3F
DTA013ZUB
(SC-85)
lInner circuit
lApplication
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
lPackaging specifications
Part No.
Package
Package
size
DTA013ZM
DTA013ZEB
DTA013ZUB
VMT3
EMT3F
UMT3F
1212
1616
2021
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
T2L 180
8
8000
57
TL 180
8
3000
57
TL 180
8
3000
57
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© 2013 ROHM Co., Ltd. All rights reserved.
1/7
20130828 - Rev.002
DTA013Z series
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Supply voltage
Input voltage
Output current
Collector current
DTA013ZM
Power dissipation
DTA013ZEB
DTA013ZUB
Junction temperature
Range of storage temperature
Datasheet
Symbol
VCC
VIN
IO
IC(MAX)*1
PD*2
Tj
Tstg
Values
-50
-10 to 5
-100
-100
150
150
200
150
-55 to +150
Unit
V
V
mA
mA
mW
℃
℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
VCC = -5V, IO = -100μA
VO = -0.3V, IO = -5mA
IO / II = -5mA / -0.5mA
VI = -5V
VCC = -50V, VI = 0V
VO = -10V, IO = -5mA
-
-
f
*1
T
VCE = -10V, IE = 5mA,
f = 100MHz
Values
Min. Typ. Max.
- - -0.4
-1.0 -
-
- -0.07 -0.15
- - -7.2
- - -500
30 -
-
0.7 1.0 1.3
8 10 12
- 250 -
Unit
V
V
mA
nA
-
kΩ
-
MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
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© 2013 ROHM Co., Ltd. All rights reserved.
2/7
20130828 - Rev.002
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