BL2302 반도체 회로 부품 판매점
N-Channel Enhancement Mode Field Effect Transistor
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 Galaxy Microelectronics |
Production specification
N-Channel Enhancement Mode Field Effect Transistor
BL2302
FEATURES
z 20V/3.6A,RDS(ON)=85m_@VGS=4.5V.
Pb
z 20V/3.1A,RDS(ON)=115m_@VGS=2.5V. Lead-free
z Super high density cell design for extremely low RDS(ON).
z Exceptional on-resistance and maximum DC current
capability.
APPLICATIONS
z Power Management in Notebook.
z Portable Equipment.
z DC/DC Converter.
ORDERING INFORMATION
SOT-23
Type No.
BL2302
Marking
A2T
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
Drain-Source voltage
20
VGSS
ID
IDM
Gate -Source voltage
Maximum Drain current TA=25℃
TA=70℃
Pulsed Drain current
±8
2.8
2.2
10
PD Power Dissipation
1.25
RθJA
Thermal resistance,Junction-to-Ambient
105
TJ Operating Junction Temperature
150
Units
V
V
A
A
W
℃/W
℃
C217
Rev.A
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1
Production specification
N-Channel Enhancement Mode Field Effect Transistor
BL2302
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-body Leakage
Zero Gate Voltage Drain Current
On-state Drain Current
Symbol
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(On)
Test conditions
VGS=0V,ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=8V
VDS=0V, VGS=-8V
VDS=20V, VGS=0V
VDS=20V,VGS=0V,Tj=55℃
VGS=4.5V, VDS≥5.0V
VGS=2.5V, VDS≥5.0V
MIN TYP MAX UNIT
20 -
-
0.6 0.9 1.2
V
-
-
-
-
100
-100
nA
- - 1 μA
- - 10
6
4A
Drain-Source on-resistance
Diode forward voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
RDS(ON)
VGS=4.5V,ID=3.6A
VGS=2.5V,ID=3.1A
VSD
Qg
Qgs
Qgd
CISS
COSS
CRSS
tD(ON)
tR
tD(OFF)
tR
VGS=0V,IS=1A
VDS=10V,VGS=4.5V,ID=3.6A
VDS=10V,VGS=0V,f=1.0MHz
VDD = 10V, ID= 3.6A,
RL = 2.8Ω, VGEN= 4.5V,
RGEN= 6Ω
-
-
55
65
85
115
mΩ
- 0.75 1.2 V
-9-
- 2.2 - nC
-3-
- 350 -
- 100 -
pF
- 90 -
-9-
-
-
23
38
-
-
ns
-3-
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
C217
Rev.A
www.gmicroelec.com
2
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제조업체: Galaxy Microelectronics
( gme )
BL2302 transistor
데이터시트 다운로드 :
[ BL2302.PDF ]
[ BL2302 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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