A1318 반도체 회로 부품 판매점
PNP Transistor
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 JCST |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SA1318 TRANSISTOR (PNP)
FEATURES
z Large Current Capacity and Wide ASO
APPLICATIONS
z Capable of Being Used in The Low Frequency to High
Frequency Range
TO – 92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-60
-50
-6
-0.2
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE (sat)
Cob
fT
Test conditions
IC=-0.01mA,IE=0
IC=-1mA,IB=0
IE=-0.01mA,IC=0
VCB=-40V,IE=0
VEB=-5V,IC=0
VCE=-6V, IC=-1mA
VCE=-6V, IC=-0.1mA
IC=-100mA,IB=-10mA
IC=-100mA,IB=-10mA
VCB=-6V, f=1MHz
VCE=-6V,IC=-10mA
Min Typ Max Unit
-60 V
-50 V
-6 V
-0.1 μA
-0.1 μA
100 560
70
-0.3 V
-1.0 V
4.5 pF
200 MHz
CLASSIFICATION OF hFE(1)
RANK
R
RANGE
100-200
S
140-280
T
200-400
U
280-560
A,Dec,2010
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A1318 transistor
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