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TEMIC |
BFQ65
Silicon NPN Planar RF Transistor
Applications
RF-amplifier up to GHz range specially for wide band an-
tenna amplifier.
Electrostatic sensitive device.
Observe precautions for handling.
Features
D High power gain
D Low noise figures
D High transition frequence
3
2
94 9308
1
Marking: BFQ 65
Plastic case (TO 50)
1 = Collector; 2 = Emitter; 3 = Base
Absolute Maximum Ratings
Parameters
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Tamb ≤ 60°C
Storage temperature range
Maximum Thermal Resistance
Parameters
Junction ambient on glass fibre printed board
(40 x 25 x 1.5) mm3 plated with 35 mm Cu
TELEFUNKEN Semiconductors
Rev. A1, 17-Apr-96
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
20
10
2.5
50
300
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
Symbol
RthJA
Maximum
300
Unit
K/W
1 (5)
BFQ65
Electrical DC Characteristics
Tamb = 25°C
Parameters / Test Conditions
Collector-emitter cut-off current
VCE = 20 V, VBE = C
Collector-base cut-off current
VCB = 15 V, IE = 0
Emitter-base cut-off current
VEB = 1 V, IC = 0
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter saturation voltage
IC = 50 mA, IB = 5 mA
DC forward current transfer ratio
IC = 15 mA, VCE = 5 V
Symbol Min. Typ. Max. Unit
ICES 100 mA
ICBO
IEBO
100 nA
1 mA
V(BR)CEO
10
V
VCEsat
0.1 0.4
V
hFE 60 100 150
Electrical AC Characteristics
Tamb = 25°C
Parameters / Test Conditions
Symbol Min. Typ. Max. Unit
Transition frequency
VCE = 8 V, IC = 15 mA, , f = 500 MHz
Collector-base capacitance
VCB = 8 V, f = 1 MHz
Collector-emitter capacitance
VCE = 8 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Noise figure
VCE = 8 V, ZS = 50 W, f = 800 MHz
IC = 5 mA
IC = 15 mA
VCE = 8 V, ZS = 50 W, f = 2 GHz
IC = 5 mA
IC = 15 mA
Power gain
IC = 15 mA, VCE = 8 V, f = 2 GHz, ZS = 50 W,
ZL = ZLopt
Linear output voltage – two tone intermodulation test
VCE = 8 V, IC = 15 mA, dIM = 60 dB,
f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 W
Third order intercept point
VCE = 8 V, IC = 15 mA, f = 800 MHz
fT
Ccb
Cce
Ceb
F
F
F
F
Gpe
V01 = V 02
IP3
7.5
0.4
0.3
1.0
1.3
1.7
2.5
3.0
8
160
26
GHz
pF
pF
pF
dB
dB
dB
dB
dB
mV
dBm
2 (5) TELEFUNKEN Semiconductors
Rev. A1, 17-Apr-96
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