파트넘버.co.kr A2077 데이터시트 PDF


A2077 반도체 회로 부품 판매점

Silicon PNP epitaxial planar type Transistors



Panasonic 로고
Panasonic
A2077 데이터시트, 핀배열, 회로
Transistors
2SA2077
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5845
Features
High forward current transfer ratio hFE
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
45
45
7
100
200
200
150
55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Marking Symbol: 7L
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
VCE(sat)
fT
Cob
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
IE = −10 µA, IC = 0
VCB = −20 V, IE = 0
VCE = −10 V, IB = 0
VCE = −10 V, IC = −2 mA
IC = −100 mA, IB = −10 mA
VCB = −10 V, IE = 1 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
45
45
7
160
0.2
80
2.2
0.1
100
460
0.5
V
V
V
µA
µA
V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: August 2003
SJC00301AED
1


A2077 데이터시트, 핀배열, 회로
2SA2077
PC Ta
250
200
150
100
50
0
0 40 80 120 160
Ambient temperature Ta (°C)
60
Ta = 25°C
IC VCE
50 Ta = −300 µA
250 µA
40
200 µA
30
150 µA
20
100 µA
10
50 µA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
IC IB
140
VCE = −10 V
Ta = 25°C
120
100
80
60
40
20
0 0 0.2 0.4 0.6 0.8 1.0 1.2
Base current IB (mA)
IB VBE
3.5
VCE = −10 V
Ta = 25°C
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.2 0.4 0.6 0.8
Base-emitter voltage VBE (V)
IC VBE
120
VCE = −10 V
100
Ta = 75°C
25°C
80
60
25°C
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
VCE(sat) IC
1 IC / IB = 10
0.1
Ta = 75°C
25°C
25°C
0.01
1
10 100
Collector current IC (mA)
hFE IC
300
VCE = −10 V
Ta = 75°C
250
25°C
200
25°C
150
100
50
0
1
10
100
1 000
Collector current IC (mA)
Cob VCB
10 f = 1 MHz
Ta = 25°C
1
0 8 16 24 32 40
Collector-base voltage VCB (V)
2 SJC00301AED




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