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FZT1149A 반도체 회로 부품 판매점

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR



Zetex Semiconductors 로고
Zetex Semiconductors
FZT1149A 데이터시트, 핀배열, 회로
PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 - JANUARY 1997
FZT1149A
FEATURES
* VCEO= -25V
* 4 Amp Continuous Current
* 10 Amp Pulse Current
* Low Saturation voltage
* High Gain
ABSOLUTE MAXIMUM RATINGS.
C
E
C
B
SOT223
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C †
Operating and Storage Temperature
Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Tj:Tstg
VALUE
-30
-25
-5
-10
-4
-500
2.5
-55 to +150
UNIT
V
V
V
A
A
mA
W
°C
† The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 2 inches x 2 inches


FZT1149A 데이터시트, 핀배열, 회로
FZT1149A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C ).
PARAMETER
SYMBOL
MIN.
VALUE
TYP. MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -30
-70
V IC=-100µA
Collector-Emitter
Breakdown Voltage
VCES
-25 -60
V IC=-100µA
Collector-Emitter
Breakdown Voltage
VCEO -25 -60
V IC=-10mA *
Collector-Emitter
Breakdown Voltage
VCEV
-25 -60
V IC=-100µA, VEB=+1V
Emitter-Base Breakdown V(BR)EBO -5
Voltage
-8.5
V IE=-100µA
Collector Cut-Off Current ICBO
-0.3 -100 nA
VCB=-24V
Emitter Cut-Off Current IEBO
-0.3 -100 nA
VEB=-4V
Collector Emitter Cut-Off ICES
Current
-0.3 -100 nA
VCE=-20V
Collector-Emitter
Saturation Voltage
VCE(sat)
-45
-100
-140
-170
-230
-80
-170
-240
-260
-350
mV
mV
mV
mV
mV
IC=-0.1A, IB=-1.0mA*
IC=-0.5A, IB=-3mA*
IC=-1A, IB=-7mA*
IC=-2A, IB=-30mA*
IC=-4A, IB=-140mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-960 -1050 mV
IC=-4A, IB=-140mA*
Base-Emitter Turn-On
Voltage
VBE(on)
-860 -1000 mV
IC=-4A, VCE=-2V*
Static Forward Current
Transfer Ratio
hFE
270 450
250 400 800
195 320
115 190
50
IC=-10mA, VCE=-2V*
IC=-0.5A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-5A, VCE=-2V*
IC=-10A, VCE=-2V*
Transition Frequency
fT
135 MHz IC=-50mA, VCE=-10V
f=50MHz
Output Capacitance
Ccb
50 pF VCB=- 10V, f= 1MHz
Switching Times
ton
150 ns IC=-4A, IB=-40mA,
VCC=-10V
toff 270 ns IC=-4A, IB=±40mA,
VCC=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%.




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FZT1149A transistor

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FZT1149A

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR - Zetex Semiconductors