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Zetex Semiconductors |
PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 - JANUARY 1997
FZT1149A
FEATURES
* VCEO= -25V
* 4 Amp Continuous Current
* 10 Amp Pulse Current
* Low Saturation voltage
* High Gain
ABSOLUTE MAXIMUM RATINGS.
C
E
C
B
SOT223
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C †
Operating and Storage Temperature
Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Tj:Tstg
VALUE
-30
-25
-5
-10
-4
-500
2.5
-55 to +150
UNIT
V
V
V
A
A
mA
W
°C
† The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 2 inches x 2 inches
FZT1149A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C ).
PARAMETER
SYMBOL
MIN.
VALUE
TYP. MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -30
-70
V IC=-100µA
Collector-Emitter
Breakdown Voltage
VCES
-25 -60
V IC=-100µA
Collector-Emitter
Breakdown Voltage
VCEO -25 -60
V IC=-10mA *
Collector-Emitter
Breakdown Voltage
VCEV
-25 -60
V IC=-100µA, VEB=+1V
Emitter-Base Breakdown V(BR)EBO -5
Voltage
-8.5
V IE=-100µA
Collector Cut-Off Current ICBO
-0.3 -100 nA
VCB=-24V
Emitter Cut-Off Current IEBO
-0.3 -100 nA
VEB=-4V
Collector Emitter Cut-Off ICES
Current
-0.3 -100 nA
VCE=-20V
Collector-Emitter
Saturation Voltage
VCE(sat)
-45
-100
-140
-170
-230
-80
-170
-240
-260
-350
mV
mV
mV
mV
mV
IC=-0.1A, IB=-1.0mA*
IC=-0.5A, IB=-3mA*
IC=-1A, IB=-7mA*
IC=-2A, IB=-30mA*
IC=-4A, IB=-140mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-960 -1050 mV
IC=-4A, IB=-140mA*
Base-Emitter Turn-On
Voltage
VBE(on)
-860 -1000 mV
IC=-4A, VCE=-2V*
Static Forward Current
Transfer Ratio
hFE
270 450
250 400 800
195 320
115 190
50
IC=-10mA, VCE=-2V*
IC=-0.5A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-5A, VCE=-2V*
IC=-10A, VCE=-2V*
Transition Frequency
fT
135 MHz IC=-50mA, VCE=-10V
f=50MHz
Output Capacitance
Ccb
50 pF VCB=- 10V, f= 1MHz
Switching Times
ton
150 ns IC=-4A, IB=-40mA,
VCC=-10V
toff 270 ns IC=-4A, IB=±40mA,
VCC=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%.
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