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FZT1047A 반도체 회로 부품 판매점

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR



Zetex Semiconductors 로고
Zetex Semiconductors
FZT1047A 데이터시트, 핀배열, 회로
SOT223 NPN SILICON PLANAR
MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 1 - AUGUST 1997
FEATURES
* VCEO = 10V
* 5 Amp Continuous Current
* 20 Amp Pulse Current
* Low Saturation Voltage
* High Gain
* Extremely Low Equivalent On-resistance; RCE(sat) = 44mat 5A
FZT1047A
C
B
SOT223
E
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Tj:Tstg
VALUE
35
10
5
20
5
500
2.5
-55 to +150
UNIT
V
V
V
A
A
mA
W
°C


FZT1047A 데이터시트, 핀배열, 회로
FZT1047A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
VALUE
TYP. MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 35
65
V IC=100µA
Collector-Emitter
Breakdown Voltage
VCES 35 55
V IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO 10 16
V IC=10mA
Collector-Emitter
Breakdown Voltage
VCEV 35 60
V IC=100µA, VEB=1V
Emitter-Base Breakdown V(BR)EBO 5
Voltage
8.9
V IE=100µA
Collector Cut-Off Current ICBO
0.3 10
nA VCB=20V
Emitter Cut-Off Current IEBO
0.3 10
nA VEB=4V
Collector Emitter Cut-Off ICES
Current
0.3 10
nA VCES=20V
Collector-Emitter
Saturation Voltage
VCE(sat)
25 40 mV IC=0.5A, IB=10mA*
50 70 mV IC=1A, IB=10mA*
140 200 mV IC=3A, IB=15mA*
220 350 mV IC=5A, IB=25mA*
Base-Emitter
Saturation Voltage
VBE(sat)
925 1000 mV IC=5A, IB=25mA*
Base-Emitter Turn-On
Voltage
VBE(on)
890 975 mV IC=5A, VCE=2V*
Static Forward Current
Transfer Ratio
hFE
280 430
290 440
300 450 1200
200 330
60 110
IC=10mA, VCE=2V*
IC=0.5A, VCE=2V*
IC=1A, VCE=2V*
IC=5A, VCE=2V*
IC=20A, VCE=2V*
Transition Frequency
fT
150 MHz IC=50mA, VCE=10V
f=50MHz
Output Capacitance
Cobo
85 110 pF VCB=10V, f=1MHz
Switching Times
ton
130 ns IC=4A, IB=40mA, VCC=10V
toff 230 ns IC=4A, IB=±40mA,
VCC=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%




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FZT1047A transistor

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FZT1047A

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR - Zetex Semiconductors