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PDF LZP60N06 Data sheet ( Hoja de datos )
| Número de pieza | LZP60N06 | |
| Descripción | N-Channel Transistor | |
| Fabricantes | LITE-ON | |
| Logotipo |  |
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LITE ON LITE-ON
SEMICONDUCTOR
LZP60N06
Features
• Avalanche Rugged Technology
• Rugged Gate Oxide Technology
• High di/dt Capability
• Improved Gate Charge
• Wide Expanded Safe Operating Area
Application
• DC-DC Converters
• UPS & Monitors
• High Power Swtching
D
G
S
GDS
TO-220
BVDSS = 60V
RDS(on) = 0.016Ω
Typ = 0.014Ω
ID = 60A
Absolute Maximum Ratings ( TC = 25°C Unless Otherwise Specified)
Symbol
Characteristic
VDSS
ID
IDM
VGS
EAS
IAR
Drain-Source Voltage
Continuous Drain Current (TC = 25°C)
Continuous Drain Current (TC = 100°C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
(1)
(2)
(1)
EAR Repetitive Avalanche Energy
(1)
dv/dt Peak Diode Recovery dv/dt
(3)
PD
Total Power Dissipation (TC = 25°C)
Linear Derating Factor
TJ, TSTG Operating Junction and Storage Temperature Range
TL
Maximum Lead Temp. for soldering purposes,
1/8" from case for 5-seconds
Value
60
60
43
240
± 20
600
60
12.5
5.5
125
0.83
-55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Characteristic
Junction-to-Case
Junction-to-Case-to-Sink
Junction-to-Ambient
Typ.
Max.
Units
-- 1.2
0.5 -- °C/W
-- 62.5
Rev 0. September. 2006
1 page  
LZP60N06
Test Circuit and waveform
VDS
L
IAS
VGS
0V
tP
RG
DUT
VDD
0
Unclamped Energy Test Circuit
N-CHANNEL
tP BVDSS
IAS
VDD
tAV Time
Unclamped Energy Waveforms
RL
RG DUT
VDD
tON
td(on)
tr
VDS
90%
0 10%
VGS
tOFF
td(off)
tf
90%
10%
90%
Switching Time Test Circuit
VGS
0
10%
Resistive Switching Waveforms
VDS
RL
VGS
Ig
DUT
Gate Charge Test Circuit
VDD
VDS
Qgs
Qg(TOTAL)
Qgd
VGS
VGS=10V
0 Ig
Gate Charge Waveforms
Rev 0. September. 2006
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet LZP60N06.PDF ] | |
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