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SavantIC |
Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SC1050
DESCRIPTION
With TO-3 package
High breakdown voltage
APPLICATIONS
For use in audio and general
purpose applications
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Tmb=25
VALUE
300
300
6
1
40
150
-55~150
UNIT
V
V
V
A
W
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0
VCEsat Collector-emitter saturation voltage IC=0.5A; IB=0.1A
VBEsat Base-emitter saturation voltage
IC=0.5A; IB=0.1A
ICBO Collector cut-off current
VCB=300V; IE=0
ICEO Collector cut-off current
VCE=300V; IB=0
IEBO Emitter cut-off current
VEB=6V; IC=0
hFE DC current gain
IC=0.3A ; VCE=5V
www.jmnic.com
2SC1050
MIN TYP. MAX UNIT
300 V
1.2 V
1.5 V
0.1 mA
0.5 mA
0.1 mA
30 200
2
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