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WW263 반도체 회로 부품 판매점

Silicon Complementary Transistors



New Jersey Semiconductor 로고
New Jersey Semiconductor
WW263 데이터시트, 핀배열, 회로
J.E.IIZU ^zmi-Conductoi ^Pioaucti, Dnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
WW263 (NPN) & WW264 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The WW263 (NPN) and WW264 (PNP) are complementary silicon Darlington power transistorsin
a TO220 type package designed for general purpose amplifier and low-speed switching applications.
Features:
• High DC Current Gain:
hFE = 2500 Typ (WW263)
= 3500 Typ (WW264)
• Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V Min
• Low Collector-Emitter Saturation Voltage:
VCE(sat)= 2VMax@lc = 5A
• Monolithic Construction with Built-in Base-Emitter Shunt Resistor
Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO
Collector-Base Voltage, VCB
Emitter-Base Voltage, VEB
Collector Current, IQ
Continuous
Peak
Base Current, IB
Total Power Dissipation (Tc = +25°C), PD
Derate Above 25°C
Total Power Dissipation (TA = +25°C), PD
Derate Above 25°C
Operating Junction Temperature range, Tj
Storage Temperature range, Tstg
Thermal Resistance, Junction-to-Case, RthJC
Thermal Resistance, Junction-to-Ambient, RthJA
100V
100V
5V
10A
15A
250mA
65W
0.52W/°C
2W
0.016W/°C
-65° to +150°C
-65° to +150°C
1.92°C/W
62.5°C/W
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductorsis believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissionsdiscovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors


WW263 데이터시트, 핀배열, 회로
Electrical Characteristics: (Tc = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
VCEO(SUS) lc = 200mA, IB = 0, Note 1
'CEO VCE = 100V, IB = 0
'CEX VCE = 100V,VEB(off) = 1.5V
100 - - y
- - 1.0 mA
- - 300 HA
VCE = 100V, VEB(0ff) = 1.5V, Tc = +125°C - -
3 mA
Emitter Cutoff Current
IEBO VBE = 5V,lc = 0
--
5 mA
ON Characteristics (Note 1)
DC Current Gain
HFE lc = 5A, VCE =3V
1000 - 20000
lc = 10A, VCE = 3V
100 -
-
Collector-Emitter Saturation Voltage
VcE(sat) IC = 5A, IB = 0.01A
lc= 10A, IB = 0.1A
-- 2 V
-- 3 V
Base-Emitter ON Voltage
vBE(on) lc = 3A, VCE = 3V
IC = 10A, VCE = 3V
- - 2.8 V
- - 4.5 V
Dynamic Characteristics
Small-Signal Current Gain
Output Capacitance
Small-Signal Current Gain
Ihfel lc=1A,VcE = 5V,ftest=1MHz
C0b VCB = 10V, IE = 0, f=1MHz
hfe lc = 1A, VCE = 5V, f = 1kHz
20 -
-
- - 200 PF
1000 -
-
Note 1. Pulse Test: Pulse Width < 300ns, Duty Cycle < 2%.
.no"
(2.79)
-H
.420"
(10.67)
MAX.
.500"(I2.
MAX
.I47"(3.73)
MAX. DIA.
TAB CONNECTS
TO PIN 2
.500"(I2.7)
MIN.
I
.Ol8"(.457)
MAX.
.I00"(2.54)
C(2)




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WW263 transistor

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