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SEMTECH |
ST 2SC4002
NPN Silicon Triple Diffused Planar Transistor
for High-Voltage Driver Applications.
The transistor is subdivided into two groups, D and E,
according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.18g
Absolute Maximum Ratings (T a = 25oC)
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
Ptot
Tj
TS
G S P FORM A IS AVAILABLE
Value
400
400
5
200
400
600
150
-55 to +150
Unit
V
V
V
mA
mA
mW
OC
OC
РАДИОТЕХ-ТРЕЙД
Тел.: (495) 795-0805
Факс: (495) 234-1603
Эл. почта: [email protected]
Веб: www.rct.ru
®
ST 2SC4002
Characteristics at Tamb=25 oC
DC Current Gain
at VCE=10V, IC=50mA
Current Gain Group D
E
Collector Cutoff Current
at VCB=300V
Emitter Cutoff Current
at VEB=4V
Collector Emitter Saturation Voltage
at IC=50mA, IB=5mA
Base Emitter Saturation Voltage
at IC=50mA, IB=5mA
Gain Bandwidth Product
at VCE=30V, IC=10mA
Symbol
hFE
hFE
ICBO
IEBO
VCE(sat)
VBE(sat)
fT
Min.
60
100
-
-
-
-
-
G S P FORM A IS AVAILABLE
Typ.
-
-
-
-
-
-
70
Max.
120
200
0.1
0.1
0.6
1.0
-
Unit
-
-
-
µA
µA
V
V
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, acompany
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
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