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Inchange Semiconductor |
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDX85/A/B/C
DESCRIPTION
·High DC Current Gain-
: hFE= 750(Min)@ IC= 3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BDX85; 60V(Min)- BDX85A
80V(Min)- BDX85B; 100V(Min)- BDX85C
·Complement to Type BDX86/A/B/C
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDX85
45
UNIT
VCBO
Collector-Base Voltage
BDX85A
BDX85B
60
80
V
BDX85C 100
BDX85
45
VCEO
BDX85A
Collector-Emitter Voltage
BDX85B
60
80
V
BDX85C 100
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
10 A
ICM Collector Current-Peak
15 A
IBB Base Current
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
100 mA
100 W
200 ℃
Tstg Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.75 ℃/W
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDX85/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX85
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDX85A
BDX85B
IC= 100mA; IB= 0
BDX85C
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB=B 16mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB=B 40mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB=B 80mA
VBE(on)
ICBO
Base-Emitter On Voltage
BDX85
Collector
Cutoff Current
BDX85A
BDX85B
BDX85C
BDX85
IC= 4A; VCE= 3V
VCB= 45V; IE= 0
VCB= 45V; IE= 0; TC= 150℃
VCB= 60V; IE= 0
VCB= 60V; IE= 0; TC= 150℃
VCB= 80V; IE= 0
VCB= 80V; IE= 0; TC= 150℃
VCB= 100V; IE= 0
VCB= 100V; IE= 0; TC= 150℃
VCE= 22V; IB=B 0
ICEO
Collector
Cutoff Current
BDX85A VCE= 30V; IB=B 0
BDX85B VCE= 40V; IB=B 0
BDX85C VCE= 50V; IB=B 0
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 3A; VCE= 3V
hFE-2
DC Current Gain
IC= 4A; VCE= 3V
hFE-3
DC Current Gain
IC= 8A; VCE= 4V
MIN TYP. MAX UNIT
45
60
V
80
100
2.0 V
4.0 V
4.0 V
2.8 V
0.5
5.0
0.5
5.0
mA
0.5
5.0
0.5
5.0
1.0 mA
1000
750
200
2.0 mA
18000
isc Website:www.iscsemi.cn
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