파트넘버.co.kr BDX85C 데이터시트 PDF


BDX85C 반도체 회로 부품 판매점

Silicon NPN Darlington Power Transistor



Inchange Semiconductor 로고
Inchange Semiconductor
BDX85C 데이터시트, 핀배열, 회로
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDX85/A/B/C
DESCRIPTION
·High DC Current Gain-
: hFE= 750(Min)@ IC= 3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BDX85; 60V(Min)- BDX85A
80V(Min)- BDX85B; 100V(Min)- BDX85C
·Complement to Type BDX86/A/B/C
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
BDX85
45
UNIT
VCBO
Collector-Base Voltage
BDX85A
BDX85B
60
80
V
BDX85C 100
BDX85
45
VCEO
BDX85A
Collector-Emitter Voltage
BDX85B
60
80
V
BDX85C 100
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
10 A
ICM Collector Current-Peak
15 A
IBB Base Current
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
100 mA
100 W
200
Tstg Storage Temperature Range
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.75 /W
isc Websitewww.iscsemi.cn


BDX85C 데이터시트, 핀배열, 회로
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDX85/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX85
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDX85A
BDX85B
IC= 100mA; IB= 0
BDX85C
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB=B 16mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB=B 40mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB=B 80mA
VBE(on)
ICBO
Base-Emitter On Voltage
BDX85
Collector
Cutoff Current
BDX85A
BDX85B
BDX85C
BDX85
IC= 4A; VCE= 3V
VCB= 45V; IE= 0
VCB= 45V; IE= 0; TC= 150
VCB= 60V; IE= 0
VCB= 60V; IE= 0; TC= 150
VCB= 80V; IE= 0
VCB= 80V; IE= 0; TC= 150
VCB= 100V; IE= 0
VCB= 100V; IE= 0; TC= 150
VCE= 22V; IB=B 0
ICEO
Collector
Cutoff Current
BDX85A VCE= 30V; IB=B 0
BDX85B VCE= 40V; IB=B 0
BDX85C VCE= 50V; IB=B 0
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 3A; VCE= 3V
hFE-2
DC Current Gain
IC= 4A; VCE= 3V
hFE-3
DC Current Gain
IC= 8A; VCE= 4V
MIN TYP. MAX UNIT
45
60
V
80
100
2.0 V
4.0 V
4.0 V
2.8 V
0.5
5.0
0.5
5.0
mA
0.5
5.0
0.5
5.0
1.0 mA
1000
750
200
2.0 mA
18000
isc Websitewww.iscsemi.cn
2




PDF 파일 내의 페이지 : 총 2 페이지

제조업체: Inchange Semiconductor

( isc )

BDX85C transistor

데이터시트 다운로드
:

[ BDX85C.PDF ]

[ BDX85C 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


BDX85

Silicon NPN Darlington Power Transistor - Inchange Semiconductor



BDX85A

Silicon NPN Darlington Power Transistor - Inchange Semiconductor



BDX85A

Bipolar NPN Device - Seme LAB



BDX85B

Silicon NPN Darlington Power Transistor - Inchange Semiconductor



BDX85B

Bipolar NPN Device - Seme LAB



BDX85C

Silicon NPN Darlington Power Transistor - Inchange Semiconductor



BDX85C

Bipolar NPN Device - Seme LAB