파트넘버.co.kr D818 데이터시트 PDF


D818 반도체 회로 부품 판매점

Silicon NPN Power Transistor



INCHANGE 로고
INCHANGE
D818 데이터시트, 핀배열, 회로
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD818
DESCRIPTION
·High Collector-Base Breakdown Voltage-
: V(BR)CBO= 1500V (Min.)
·Low Collector Saturation Voltage-
·High Switching Speed
APPLICATIONS
·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
i.cnSYMBOL
PARAMETER
MAX
UNIT
.iscsemVCBO
Collector-Base Voltage
1500
V
wwwVCEO
Collector-Emitter Voltage
600 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
2.5 A
IE Emitter Current-Continuous
PC
Collector Power Dissipation
@TC=25
Tj Junction Temperature
-2.5 A
50 W
150
Tstg Storage Temperature Range
-65~150
isc Websitewww.iscsemi.cn


D818 데이터시트, 핀배열, 회로
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD818
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB=B 0.6A
ICBO Collector Cutoff Current
VCB= 500V; IE= 0
8.0 V
1.5 V
10 μA
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
1.0 mA
hFE DC Current Gain
IC= 0.5A; VCE= 5V
8
COB Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
i.cnfT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V
www.iscsemtf FallTime
ICP= 2A; IB1(end)= 0.6A
95 pF
3 MHz
1.0 μs
isc Websitewww.iscsemi.cn




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D818 transistor

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