6R600P 반도체 회로 부품 판매점
Power Transistor
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 Infineon Technologies |
CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS @ Tj,max
R DS(on),max @ Tj =25°C
Q g,typ
IPB60R600CP
650 V
0.6 Ω
21 nC
PG-TO263
CoolMOS CP is designed for:
• Hard switching SMPS topologies
Type
IPB60R600CP
Package
PG-TO263
Marking
6R600P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
Gate source voltage
ID
I D,pulse
E AS
E AR
I AR
dv /dt
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=2.2 A, V DD=50 V
I D=2.2 A, V DD=50 V
V DS=0...480 V
static
AC (f >1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Rev.2.0
page 1
Value
6.1
3.8
15
144
0.2
2.2
50
±20
±30
60
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2008-02-15
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
IPB60R600CP
Value
3.3
15
15
Unit
A
V/ns
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
- - 2.1 K/W
Thermal resistance, junction -
ambient
R thJA
R thJA
leaded
SMD version, device
on PCB, minimal
footprint
SMD version, device
on PCB, 6 cm2 cooling
area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
-
-
-
- 62
- 62
35 -
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V (BR)DSS V GS=0 V, I D=250 µA
V GS(th) V DS=V GS, I D=220µA
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
V DS=600 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=3.3 A,
T j=25 °C
V GS=10 V, I D=3.3 A,
T j=150 °C
R G f =1 MHz, open drain
600
2.5
-
-
-
-
-
-
-
3
-
10
-
0.54
1.5
1.5
-V
3.5
1 µA
-
100 nA
0.6 Ω
-
-Ω
Rev.2.0
page 2
2008-02-15
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제조업체: Infineon Technologies
( infineon )
6R600P transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
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