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STU314D 반도체 회로 부품 판매점

Dual Enhancement Mode Field Effect Transistor



SamHop 로고
SamHop
STU314D 데이터시트, 핀배열, 회로
STU314DGreen
Product
Sa mHop Microelectronics C orp.
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
Ver 1.0
PRODUCT SUMMARY (N-Channel)
VDSS
30V
ID
16A
RDS(ON) (m) Max
28 @ VGS=10V
40 @ VGS=4.5V
PRODUCT SUMMARY (P-Channel)
VDSS
ID
-30V
-14A
RDS(ON) (m) Max
34 @ VGS=-10V
55 @ VGS=-4.5V
D1/D2
S1
G1
S2 G2
TO-252-4L
D1 D2
G1 G2
S 1 N-ch
S 2 P-ch
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
N-Channel P-Channel
VDS Drain-Source Voltage
VGS Gate-Source Voltage
30 -30
±20 ±20
ID Drain Current-Continuous a
IDM -Pulsed b
TC=25°C
TC=70°C
16 -14
13 -11
47 -42
EAS Sigle Pulse Avalanche Energy d
16 64
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
10.4
6.7
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case a
Thermal Resistance, Junction-to-Ambient a
12
60
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Feb,04,2009
www.samhop.com.tw


STU314D 데이터시트, 핀배열, 회로
STU314D
Ver 1.0
N-Channel ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=24V , VGS=0V
VGS= ±20V , VDS=0V
30 V
1 uA
±10 uA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
VDS=VGS , ID=250uA
VGS=10V , ID=16A
VGS=4.5V , ID=13.7A
VDS=5V , ID=16A
1 1.9 3
V
22 28 m ohm
31 40 m ohm
25 S
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=15V,VGS=0V
f=1.0MHz
VDD=15V
ID=1A
VGS=10V
RGEN=6 ohm
VDS=15V,ID=16A,VGS=10V
VDS=15V,ID=16A,VGS=4.5V
VDS=15V,ID=16A,
VGS=10V
505
105
65
12
11
16.6
14
8.8
4.3
1.5
2.3
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Diode Forward Voltage b
VGS=0V,IS=1.7A
1.7
0.8 1.2
A
V
Feb,04,2009
2 www.samhop.com.tw




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STU314D

Dual Enhancement Mode Field Effect Transistor - SamHop