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STU435S 반도체 회로 부품 판매점

P-Channel Logic Level Enhancement Mode Field Effect Transistor



SamHop Microelectronics 로고
SamHop Microelectronics
STU435S 데이터시트, 핀배열, 회로
Gr
Pr
STU/D435S
Sa mHop Microelectronics C orp.
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
-40V
-38A
17.5 @ VGS=10V
27 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous
TC=25°C
TC=70°C
IDM -Pulsed a
EAS Sigle Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
-40
±20
-38
-30.4
-115
156
42
27
-55 to 150
3
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Jul,01,2011
www.samhop.com.tw


STU435S 데이터시트, 핀배열, 회로
STU/D435S
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=-250uA
VDS=-32V , VGS=0V
VGS= ±20V , VDS=0V
-40
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=-250uA
VGS=-10V , ID=-19A
VGS=-4.5V , ID=-15A
VDS=-10V , ID=-19A
VDS=-20V,VGS=0V
f=1.0MHz
VDD=-20V
ID=-1A
VGS=-10V
RGEN= 6 ohm
VDS=-20V,ID=-19A,VGS=-10V
VDS=-20V,ID=-19A,VGS=-4.5V
VDS=-20V,ID=-19A,
VGS=-10V
-1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS= -4A
Notes
a.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
b.Guaranteed by design, n_ot subject to product_ion testing.
c.Starting TJ=25°C,L=0.5mH,VDD = 20V .(See Figure13)
Typ Max Units
1
±100
V
uA
nA
-1.7 -3
V
14 17.5 m ohm
20 27 m ohm
36 S
1950
229
186
pF
pF
pF
24 ns
38 ns
11 ns
8 ns
42 nC
20 nC
3.4 nC
11 nC
-0.78 -1.3 V
Jul,01,2011
2 www.samhop.com.tw




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STU435S transistor

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P-Channel Logic Level Enhancement Mode Field Effect Transistor - SamHop Microelectronics