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STU307S 반도체 회로 부품 판매점

P-Channel Logic Level Enhancement Mode Field Effect Transistor



SamHop Microelectronics 로고
SamHop Microelectronics
STU307S 데이터시트, 핀배열, 회로
STU/D307SGreen
Product
Sa mHop Microelectronics C orp.
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
-30V
-53A
9.5 @ VGS=-10V
14 @ VGS=-4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
TC=25°C
TC=70°C
IDM -Pulsed b
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case a
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
-30
±20
-53
-42
-160
42
27
-55 to 150
3
50
Units
V
V
A
A
A
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
Downloaded from Elcodis.com electronic components distributor
1
Jan,29,2010
www.samhop.com.tw


STU307S 데이터시트, 핀배열, 회로
STU/D307S
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=-250uA
VDS=-24V , VGS=0V
VGS= ±20V , VDS=0V
-30
ON CHARACTERISTICS
VGS(th)
RDS(ON)
gFS
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
VDS=VGS , ID=-250uA
VGS=-10V , ID=-26.5A
VGS=-4.5V , ID=-21A
VDS=-5V , ID=-26.5A
-1
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
VDS=-15V,VGS=0V
f=1.0MHz
tD(ON)
tr
tD(OFF)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=-15V
ID=-1.0A
VGS=-10V
RGEN= 6 ohm
VDS=-15V,ID=-25A,VGS=-10V
VDS=-15V,ID=-25A,VGS=-4.5V
VDS=-15V,ID=-25A,
VGS=-10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Is Maximum Continuous Drain-Source Forward Current
VSD Diode Forward Voltage b
VGS=0V,IS= -12A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
Typ
-1.8
7.5
10.5
52
3100
850
400
45
85
340
150
75
35
8
22
-0.8
Max Units
V
1 uA
±10 uA
-3 V
9.5 m ohm
14 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
-12 A
-1.3 V
Downloaded from Elcodis.com electronic components distributor
2
Jan,29,2010
www.samhop.com.tw




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STU307S transistor

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P-Channel Logic Level Enhancement Mode Field Effect Transistor - SamHop Microelectronics