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STU303S 반도체 회로 부품 판매점

P-Channel Enhancement Mode Field Effect Transistor



SamHop Microelectronics 로고
SamHop Microelectronics
STU303S 데이터시트, 핀배열, 회로
S TU/D303S
S amHop Microelectronics C orp.
Nov,16, 2007
P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S ID R DS (ON) ( m Ω ) Max
-30V -24A
28 @ VGS = -10V
40 @ VGS = -4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
E S D P rocteced
D
G
S
S TU S E R IE S
T O -252AA(D-P AK )
G
DS
S TU S E R IE S
TO-251(l-P AK)
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ Tc=25 C
-P ulsed a
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation @ Tc=25 C
Operating Junction and S torage
Temperature R ange
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
-30
20
-24
-96
-20
50
-55 to 175
Unit
V
V
A
A
A
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
R JC
R JA
3
50
C /W
C /W
1


STU303S 데이터시트, 핀배열, 회로
S TU/D303S
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ C Max Unit
5 OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS a
Gate Threshold Voltage
BVDSS
IDSS
IGSS
V G S (th)
Drain-S ource On-S tate R esistance R DS(ON)
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS b
ID(ON)
gFS
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICSb
Turn-On Delay Time
tD(ON)
R ise Time
tr
Turn-Off Delay Time
tD(O F F )
Fall Time
tf
VGS =0V, ID =-250uA
VDS =-20V, VGS =0V
VGS = 20V, VDS= 0V
-30
V
-1 uA
10 uA
VDS =VGS, ID = -250uA
VGS =-10V, ID= -12A
VGS =-4.5V, ID = - 6A
VDS = -10V, VGS = -10V
VDS = -10V, ID= -10A
-1 -1.8 -3 V
23 28 m ohm
34 40 m ohm
-30 A
11.5 S
VDS =-15V, VGS = 0V
f =1.0MHZ
1130 PF
270 PF
170 PF
VDD = -15V
ID = -1 A
VGS = -10V
R GEN = 6 ohm
19 ns
31 ns
100 ns
28 ns
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate-S ource Charge
Gate-Drain Charge
Qg
VDS =-15V, ID = -12A
VGS =-10V
Qgs
Qgd
2
22 nC
10.6 nC
2.7 nC
6.4 nC




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STU303S transistor

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