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PDF STD09N25 Data sheet ( Hoja de datos )
| Número de pieza | STD09N25 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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Green
Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
STU09N25
STD09N25
Ver 1.0
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Max
250V
7.5A
0.4 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a d
TC=25°C
TC=100°C
IDM -Pulsed b
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
250
±20
7.5
4.74
25
52
21
-55 to 150
2.4
50
Units
V
V
A
A
A
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Sep,09,2013
www.samhop.com.tw
1 page  
STU09N25
STD09N25
Ver 1.0
VDS
L
RG
20V
tp
D.U.T
IAS
0.01
+
- VDD
Uncamped Inductive Test Circuit
Figure 13a.
V( BR )D S S
tp
IAS
Unclamped Inductive Waveforms
F igure 13b.
2
1
D =0 . 5
0.2
0.1
0.1
0.05
0.02
P DM
t1
t2
0.01
1. R ӰJC (t)=r (t) * R ӰJC
2. R ӰJC =S ee Datas heet
S INGLE PULS E
3. T J M-T C = P DM* R ӰJ C (t)
4. Duty C ycle, D=t1/t2
0.01
10-5
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
10
Sep,09,2013
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet STD09N25.PDF ] | |
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