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STU09N25 반도체 회로 부품 판매점

N-Channel Enhancement Mode Field Effect Transistor



SamHop Microelectronics 로고
SamHop Microelectronics
STU09N25 데이터시트, 핀배열, 회로
Green
Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
STU09N25
STD09N25
Ver 1.0
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Max
250V
7.5A
0.4 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a d
TC=25°C
TC=100°C
IDM -Pulsed b
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
250
±20
7.5
4.74
25
52
21
-55 to 150
2.4
50
Units
V
V
A
A
A
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Sep,09,2013
www.samhop.com.tw


STU09N25 데이터시트, 핀배열, 회로
STU09N25
STD09N25
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=10mA
VDS=200V , VGS=0V
VGS= ±20V , VDS=0V
250
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=3.75A
VDS=10V , ID=3.75A
VDS=25V,VGS=0V
f=1.0MHz
VDD=125V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=125V,ID=1A,VGS=10V
VDS=125V,ID=1A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=4A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Drain current limited by maximum junction temperature.
Typ Max Units
1
±100
V
uA
nA
1.9 3
V
0.31 0.4 ohm
6.5 S
940 pF
58 pF
39 pF
19.2
21
29.2
14.3
12.8
1.7
4.3
ns
ns
ns
ns
nC
nC
nC
0.81 1.3 V
Sep,09,2013
2 www.samhop.com.tw




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STU09N25 transistor

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N-Channel Enhancement Mode Field Effect Transistor - SamHop Microelectronics