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STU25L01 반도체 회로 부품 판매점

N-Channel Logic Level Enhancement Mode Field Effect Transistor



SamHop Microelectronics 로고
SamHop Microelectronics
STU25L01 데이터시트, 핀배열, 회로
STU25L01Gre
Pro
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS ID RDS(ON) (m ) Typ
100V
25A
35 @ VGS=10V
45 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous
TC=25°C
TC=70°C
IDM -Pulsed a
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
100
±20
25
21
73
50
35
-55 to 175
3
50
Units
V
V
A
A
A
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Apr,18,2012
www.samhop.com.tw


STU25L01 데이터시트, 핀배열, 회로
STU25L01
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=80V , VGS=0V
VGS= ±20V , VDS=0V
100
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=12.5A
VGS=4.5V , ID=11A
VDS=10V , ID=12.5A
VDS=25V,VGS=0V
f=1.0MHz
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=50V,ID=12.5A,VGS=10V
VDS=50V,ID=12.5A,VGS=4.5V
VDS=50V,ID=12.5A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=4A
Notes
a.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
b.Guaranteed by design, not subject to production testing.
Typ Max Units
1
±100
V
uA
nA
2.0 3
V
35 42 m ohm
45 55 m ohm
22 S
1460
88
75
pF
pF
pF
25 ns
23 ns
66 ns
14 ns
26 nC
13 nC
2.6 nC
9.3 nC
0.79 1.3 V
Apr,18,2012
2 www.samhop.com.tw




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STU25L01 transistor

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N-Channel Logic Level Enhancement Mode Field Effect Transistor - SamHop Microelectronics