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STU420S 반도체 회로 부품 판매점

N-Channel Logic Level Enhancement Mode Field Effect Transistor



SamHop Microelectronics 로고
SamHop Microelectronics
STU420S 데이터시트, 핀배열, 회로
S T U/D420S
S amHop Microelectronics C orp.
J uly 05,2006
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
40V
ID R DS (ON) ( m W ) Max
24 @ VGS = 10V
24A
30 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO-252 and TO-251 P ackage.
D
G
S
S TU S E R IE S
T O -252AA(D-P AK )
GDS
S TD S E R IE S
TO-251(l-P AK)
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous a @ TC=25 C
-P ulsed b
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation @ Tc=25 C
S ymbol
VDS
VGS
ID
IDM
IS
PD
Limit
40
20
24
75
8
50
Unit
V
V
A
A
A
W
Operating and S torage Temperature R ange TJ, TS TG
-55 to 175
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
R JC
R JA
3
50
C /W
C /W


STU420S 데이터시트, 핀배열, 회로
S T U/D420S
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ C Max Unit
5 OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
BVDSS VGS =0V, ID =250uA
40
V
Zero Gate Voltage Drain Current
IDSS VDS =32V, VGS =0V
1 uA
Gate-Body Leakage
ON CHARACTERISTICS a
IGSS VGS = 20V, VDS= 0V
10 uA
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = 250uA 1 1.9 3 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =10V, ID =10A
VGS =4.5V, ID= 8A
17 24 m oh
23.5 30 m oh
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS b
ID(ON)
gFS
VDS = 10V, VGS = 10V
VDS = 10V, ID = 10A
30
16
A
S
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
C IS S
COSS
VDS =15V, VGS = 0V
f =1.0MHZ
CRSS
750 PF
110 PF
65 PF
Gate resistance
R g VGS =0V, VDS = 0V, f=1.0MHZ
SWITCHING CHARACTERISTICS b
3
ohm
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
tD(ON) VDD = 15V
tr ID = 1 A
tD(O F F )
VGS = 10V
R GEN = 3 ohm
tf
13 ns
10 ns
37 ns
12 ns
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
Qg VDS =20V, ID =10A,VGS =10V
VDS =20V, ID =10A,VGS =4.5V
Qgs VDS =20V, ID = 10A
Qgd VGS =10V
2
15
7
2.5
4
nC
nC
nC
nC




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STU420S transistor

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N-Channel Logic Level Enhancement Mode Field Effect Transistor - SamHop Microelectronics