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PDF 2SC5397 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5397 | |
| Descripción | TRANSISTOR | |
| Fabricantes | IDC | |
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Hay una vista previa y un enlace de descarga de 2SC5397 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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DESCRIPTION
2SC5397 is a silicon NPN epitaxial type transistor.
〈transistor〉
2SC5397
For High Frequency Amplify, Middle Frequency Amplify
Silicon NPN Epitaxial Type Micro（Frame type）
OUTLINE DRAWING
UNIT：mm
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
VCBO Collector to Base voltage
VEBO Emitter to Base voltage
VCEO Collector to Emitter voltage
IC Collector current
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
Ratings
30
4
25
30
450
+150
-55～+150
TERMINAL CONNECTOR
①：EMITTER
②：COLLECTOR
③：BASE
EIAJ： -
JEDEC： -
Unit MARKING
V
V
V 397
mA □□B
mW
℃
hFE Item
℃
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Symbol
Test conditions
ICBO
Collector cut off current
V CB= 30V , I E= 0mA
IEBO Emitter cut off current
V EB= 4V , I C= 0mA
hFE DC forward current gain ※ V CE = 6V , IC= 1mA
fT Gain bandwidth product
V CE= 6V , I E= -1mA
Cob Collector output capacitance V CB= 6V , I E= 0mA,f=1MHz
Ccrb'b Collector- base time constant V CB=6V, I E=-1mA, f=31.8MHz
NF Noise figure
V CE= 6V , I E= -0.1mA,f=1kHz,RG=2kΩ
※：It shows hFE classification at right table.
Item B
hFE 35～70
Limits
Min Typ Max
-- 1
-- 1
35 - 300
150 200
-
- 2.0 2.7
- 20 60
3.0 -
Unit
μA
μA
-
MHz
pF
pS
dB
C
55～110
D
90～180
E
150～300
ISAHAYA ELECTRONICS CORPORATION
1 page  
〈transistor〉
2SC5397
For High Frequency Amplify, Middle Frequency Amplify
Silicon NPN Epitaxial Type Micro（Frame type）
ISAHAYA ELECTRONICS CORPORATION
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SC5397.PDF ] | |
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