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PDF TJ20A10M3 Data sheet ( Hoja de datos )
| Número de pieza | TJ20A10M3 | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TJ20A10M3
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSVI)
TJ20A10M3
Swiching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 50 S (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −100 V)
• Enhancement-model: Vth = −2.0 to −4.0 V (VDS = −10 V, ID = −1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−100
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−100
V
Gate-source voltage
VGSS ±20 V
Drain current
DC (Note 1)
Pulse (Note 1)
ID
IDP
−20
A
−40
Drain power dissipation (Tc = 25°C)
PD
35 W
Single pulse avalanche energy
(Note 2)
Avalanche current
EAS
IAR
124 mJ
−20 A
1: Gate
2: Drain
3: Source
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
EAR
Tch
Tstg
2.29
150
−55 to 150
mJ
°C
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
⎯
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = −25 V, Tch = 25°C, L = 500 μH, RG = 25 Ω, IAR = −20 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
Thermal Characteristics
2
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Symbol
Rth (ch−c)
Rth (ch−a)
Max
3.57
62.5
Unit
°C / W
°C / W
This transistor is an electrostatic sensitive device. Please handle with caution.
1
3
Start of commercial production
2009-03
1 2013-11-01
1 page  
RDS (ON) − Tc
200
Common source
Pulse Test
160
120
80
VGS = −10 V
40
ID = −20 A
−10
−5
0
−80 −40
0
40
80 120 160
Case temperature Tc (°C)
TJ20A10M3
−100
Common source
Tc = 25°C
Pulse Test
IDR − VDS
−10
−10
−5
−3
−1 VGS = −0.1 V
−1
0 −0.4 −0.8 −1.2 −1.6
Drain-source voltage VDS (V)
−2
10000
1000
100
Capacitance – VDS
Ciss
Coss
Crss
10
Common source
VGS = 0 V
f =1MHz
Tc = 25°C
1
−0.1
−1
−10
Drain-source voltage VDS (V)
−100
Vth − Tc
−3.5
−3
−2.5
−2
−1.5
−1
−0.5
Common source
VDS = −10 V
ID = −1mA
Pulse Test
0
−80 −40
0
40 80 120
Case temperature Tc (°C)
160
PD − Tc
50
40
30
20
10
0
0 40 80 120 160
Case temperature Tc (°C)
−100
VDS
−80
−60
−40
−20
Dynamic input / output
characteristics
20
−40
VDD = −20 V
−80
16
12
VGS
8
Common source
ID = −20 A
Tc = 25°C
Pulse Test
4
00
0 40 80 120 160 200
Total gate charge Qg (nC)
5 2013-11-01
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TJ20A10M3.PDF ] | |
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