|
Vishay |
BCW61 Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (PNP)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
Top View
12
Pin Configuration
1. Base 2. Emitter
3. Collector
.037(0.95) .037(0.95)
Mounting Pad Layout
0.031 (0.8)
0.079 (2.0)
0.035 (0.9)
0.037 (0.95)
0.037 (0.95)
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Features
• PNP Silicon Epitaxial Planar Transistors
• Suited for low level, low noise, low
frequency applications in hybrid cicuits.
• Low Current, Low Voltage.
• As complementary types, BCW60 Series NPN
transistors are recommended.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking
Code:
BCW61A = BA
BCW61B = BB
BCW61C = BC
BCW61D = BD
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Peak Collector Current
Base Current (DC)
Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient Air
Symbol
–VCES
–VCEO
–VEBO
–IC
–ICM
–IB
Ptot
Tj
TSTG
RθJA
Value
32
32
5.0
100
200
50
250
150
–65 to +150
500(1)
Unit
V
V
V
mA
mA
mA
mW
°C
°C
°C/W
Note:
(1) Mounted on FR-4 printed-ciruit board.
Document Number 88171
09-May-02
www.vishay.com
1
BCW61 Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Symbol
Min.
TYP.
DC Current Gain
at –VCE = 5 V, –IC = 10 µA
at –VCE = 5 V, –IC = 10 µA
at –VCE = 5 V, –IC = 10 µA
at –VCE = 5 V, –IC = 10 µA
BCW61A
BCW61B
BCW61C
BCW61D
hFE
hFE
hFE
hFE
–
30
40
100
–
–
–
–
at –VCE = 5 V, –IC = 2 mA
at –VCE = 5 V, –IC = 2 mA
at –VCE = 5 V, –IC = 2 mA
at –VCE = 5 V, –IC = 2 mA
BCW61A
BCW61B
BCW61C
BCW61D
hFE
hFE
hFE
hFE
120
180
250
380
–
–
–
–
at –VCE = 1 V, –IC = 50 mA
at –VCE = 1 V, –IC = 50 mA
at –VCE = 1 V, –IC = 50 mA
at –VCE = 1 V, –IC = 50 mA
BCW61A
BCW61B
BCW61C
BCW61D
Collector-Emitter Saturation Voltage
at –IC = 10 mA, –IB = 0.25 mA
at –IC = 50 mA, –IB = 1.25 mA
Base-Emitter Saturation Voltage
at –IC = 10 mA, –IB = 0.25 mA
at –IC = 50 mA, –IB = 1.25 mA
Base-Emitter Voltage
at –VCE = 5 V, –IC = 2 mA
at –VCE = 5 V, –IC = 10 µA
at –VCE = 1 V, –IC = 50 mA
Collector-Emiter Cut-off Current
at –VCE = 32 V, VEB=0
at –VCE = 32 V, VEB=0, TA = 150°C
Emitter-Base Cut-off Current
at –VEB = 4 V, IC=0
Gain-Bandwidth Product
at –VCE = 5 V, –IC = 10 mA, f = 100 MHz
Collector-Base Capacitance
at –VCB = 10 V, f = 1 MHZ, IE=0
Emitter-Base Capacitance
at –VEB = 0.5 V, f = 1 MHZ, IC=0
Noise Figure
at –VCE = 5 V, –IC = 200 µA, RS = 2 kΩ, f = 100 kHZ, B = 200Hz
Small Signal Current Gain
at –VCE = 5V, –IC = 2 mA, f = 1.0 kHZ
BCW60A
BCW60B
BCW60C
BCW60D
Turn-on Time at RL = 990Ω (see fig. 1)
– VCC = 10V, –Ic = 10mA, –IB(on) = IB(off) = 1mA
Turn-off Time at RL = 990Ω (see fig. 1)
– VCC = 10V, –Ic = 10mA, –IB(on) = IB(off) = 1mA
hFE
hFE
hFE
hFE
–VCEsat
–VCEsat
–VBEsat
–VBEsat
–VBE
–VBE
–VBE
–ICES
–IEBO
fT
CCBO
CEBO
F
hfe
ton
toff
60
80
100
110
60
120
600
680
600
–
–
–
–
–
100
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
650
550
720
–
–
–
–
4.5
11
2
200
260
330
520
85
480
Max.
–
–
–
–
220
310
460
630
–
–
–
–
250
550
850
1050
750
–
–
20
20
20
–
–
–
6
150
800
Unit
–
–
–
–
–
–
–
–
–
–
–
–
mV
mV
mV
mV
mV
mV
mV
nA
µA
nA
MHz
pF
pF
dB
ns
ns
www.vishay.com
2
Document Number 88171
09-May-02
|