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FODM8801A 반도체 회로 부품 판매점

High-Temperature Phototransistor Optocoupler



Fairchild Semiconductor 로고
Fairchild Semiconductor
FODM8801A 데이터시트, 핀배열, 회로
April 2013
FODM8801A, FODM8801B, FODM8801C
OptoHiT™ Series, High-Temperature Phototransistor
Optocoupler in Half-Pitch Mini-Flat 4-Pin Package
Features
Utilizing Proprietary Process Technology to Achieve
High Operating Temperature: up to 125°C
Guaranteed Current Transfer Ratio (CTR)
Specifications Across Full Temperature Range
– Excellent CTR Linearity at High-Temperature
– CTR at Very Low Input Current, IF
High Isolation Voltage Regulated by Safety Agency:
C-UL / UL1577, 3750 VACRMS for 1 minute and
DIN EN/IEC60747-5-5
Compact Half-Pitch, Mini-Flat, 4-Pin Package
(1.27 mm Lead Pitch, 2.4 mm Maximum Standoff
Height)
> 5mm Creepage and Clearance Distance
Applicable to Infrared Ray Reflow, 245°C
Applications
Primarily Suited for DC-DC Converters
Ground-Loop Isolation, Signal-Noise Isolation
Communications – Adapters, Chargers
Consumer – Appliances, Set-Top Boxes
Industrial – Power Supplies, Motor Control,
Programmable Logic Control
Description
In the OptoHiT™ series, the FODM8801 is a first-of-kind
phototransistor, utilizing Fairchild’s leading-edge
proprietary process technology to achieve high operating
temperature characteristics, up to 125°C. The opto-
coupler consists of an aluminum gallium arsenide
(AlGaAs) infrared light-emitting diode (LED) optically
coupled to a phototransistor, available in a compact half-
pitch, mini-flat, 4-pin package. It delivers high current
transfer ratio at very low input current. The input-output
isolation voltage, VISO, is rated at 3750 VACRMS.
Schematic
Package
ANODE 1
4 COLLECTOR
CATHODE 2
3 EMITTER
Figure 1. Schematic
Figure 2. Half-Pitch Mini-Flat
©2010 Fairchild Semiconductor Corporation
FODM8801X Rev. 1.1.2
www.fairchildsemi.com


FODM8801A 데이터시트, 핀배열, 회로
Safety and Insulation Ratings for Half-Pitch Mini-Flat Package
As per DIN EN/IEC 60747-5-5. This optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Installation Classifications per DIN VDE 0110/1.89
Table 1
For rated main voltage < 150 Vrms
For rated main voltage < 300 Vrms
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
CTI Comparative Tracking Index
VPR Input to Output Test Voltage, Method b,
VIORM x 1.875 = VPR,100% Production Test with
tm = 1 sec, Partial Discharge < 5pC
VPR Input to Output Test Voltage, Method a,
VIORM x 1.5 = VPR,Type and Sample Test with
tm = 60 sec, Partial Discharge < 5pC
VIORM Max Working Insulation Voltage
VIOTM Highest Allowable Over Voltage
External Creepage
External Clearance
Insulation thickness
Safety Limit Values- Maximum Values allowed in the
event of a failure,
TS Case Temperature
IS,INPUT Input Current
PS,OUTPUT Output Power
RIO Insulation Resistance at TS,VIO=500 V
Min.
Typ.
Max. Unit
175
1060
I-IV
I-III
40/125/21
2
848
565
4000
5
5
0.5
150
200
300
109
Vpeak
Vpeak
Vpeak
Vpeak
mm
mm
mm
°C
mA
mW
Ω
©2010 Fairchild Semiconductor Corporation
FODM8801X Rev. 1.1.2
2
www.fairchildsemi.com




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FODM8801A transistor

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