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Toshiba Semiconductor |
RN4903
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
RN4903
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
Includeing two devices in US6 (ultra super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Equivalent Circuit and Bias Resister Values
R 1: 22kΩ
R 2: 22kΩ
(Q1, Q2 Common)
Q1 Maximum Ratings (Ta = 25°C)
Characteristic S
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
ymbol
VCBO
VCEO
VEBO
IC
Q2 Maximum Ratings (Ta = 25°C)
Characteristic S
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
ymbol
VCBO
VCEO
VEBO
IC
Rating
−50
−50
−10
−100
Rating
50
50
10
100
JEDEC
Unit EIAJ
TOSHIBA
V Weight: 6.8mg
V
V
mA
―
―
2-2J1A
Unit
V
V
V
mA
1 2001-06-07
http://www.Datasheet4U.com
Q1, Q2 Common Maximum Ratings (Ta = 25°C)
Characteristic S
Collector power dissipation
Junction temperature
Storage temperature range
* Total rating
ymbol
PC * 200
Tj 150
Tstg
Rating
−55~150
Marking
Unit
mW
°C
°C
RN4903
Equivalent Circuit (Top View)
Q1 Electrical Characteristics (Ta = 25°C)
Characteristic S
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
ymbol
ICBO
ICEO
IEBO
hFE
VCE (sat)
VI (ON)
VI (OFF)
fT
Cob
Test
Circuit
Test Condition
― VCB = −50V, IE = 0
― VCE = −50V, IB = 0
― V EB = −10V, IC = 0
― VCE = −5V, IC = −10mA 70
― IC = −5mA, IB = −0.25mA
― VCE = −0.2V, IC = −5mA
― VCE = −5V, IC = −0.1mA
― VCE = −10V, IC = −5mA
― VCB = −10V, IE = 0, f = 1MHz
Min Typ. Max Unit
――
――
−0.17 ―
―
― −0.1
−1.3 ―
−1.0 ―
― 200
―3
−100
−500
nA
−0.33 m A
――
−0.3 V
−3.0 V
−1.5 V
― MHz
6 pF
2 2001-06-07
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