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RCR1540ESJ 반도체 회로 부품 판매점

P-Channel Enhancement Mode Field Effect Transistor



RCR 로고
RCR
RCR1540ESJ 데이터시트, 핀배열, 회로
®
RCR15
P-Channel Enhancement Mode Field Effect Transistor
z Features
VDS (V) = -20V,ID = -4A
RDS(ON)<55m@ VGS= -4.5V
RDS(ON)<63m@ VGS= -2.5V
RDS(ON)<83m@ VGS= -1.8V
SOT23-3L Package
ESD Protected:3000V HBM
z Pin Configurations
z General Description
The RCR1540ESJ uses advanced trench technology to provide excellent
RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.
This device is suitable for use as a load switch or in PWM applications.
z Package Information
40ESJ
z Absolute Maximum Ratings @TA=25unless otherwise noted
Parameter Sy
mbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
YKKJPD-V3.1
Ratings
-20
±8
Unit
V
V
1/5
http://www.Datasheet4U.com


RCR1540ESJ 데이터시트, 핀배열, 회로
®
Drain Current (Continuous)
TA=25°C
TA=70°C
Drain Current (Pulse)
Power Dissipation
TA=25°C
Operating Temperature/ Storage Temperature
RCR15
ID
IDM
PD
TJ//TSTG
-4
-3.2
-30
1.4
-55~150
40ESJ
A
A
W
z Electrical Characteristics @TA=25unless otherwise noted
Parameter
Symbol Test
Conditions Min
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous
Current
ON/OFF CHARACTERISTICS
V(BR)DSS
VGS = 0V, ID= -250μA
IDSS VDS = -16 V , VGS = 0V
VGS(th)
VGS =VDS , IDS=-250μA
IGSS VGS=±8V , VDS=0V
VGS = -4.5V , ID= -4A
RDS(on)
VGS = -2.5V , ID= -4A
VGS = -1.8V , ID= -2A
gFS VDS= -5V , ID= -4A
VSD ISD= -1A , VGS= 0V
IS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Switching CHARACTERISTICS
Qg
Qgs
VDS = -10V, ID = -4A
VGS = -4.5V
Qgd
td ( on )
tr
td( off )
tf
VDD = -10V, RL=2.5Ω
ID = -4A, VGEN = -4.5V
RG = 3Ω
Dynamic CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS=0V,VDS= -10V
f= 1.0MHz
Notes:
1. Pulse width limited by maximum junction temperature.
2. Pulse test: PW300μs, duty cycle2%.
3. For design AID only, not subject to production testing.
4. Switching time is essentially independent of operating temperature.
Typ Max Unit
-20
--
-0.3
--
--
--
--
8
--
-- --
--
--
-0.65
--
50
59
74
16
-0.81
--
-1
-1
±10
55
63
83
--
-1.0
-2.2
V
μA
V
μA
m
m
m
S
V
A
-- 4.59
-- 2.14
-- 2.51
-- 965.2
-- 1604
-- 7716
-- 3452
5.97
2.78
3.26
1930.4
3208
15432
6904
nC
nC
nC
ns
ns
ns
ns
-- 36.45
-- 128.57
-- 15.17
--
--
--
pF
pF
pF
YKKJPD-V3.1
2/5




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RCR1540ESJ

P-Channel Enhancement Mode Field Effect Transistor - RCR