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KEC |
SEMICONDUCTOR
TECHNICAL DATA
KF10N60P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
VDSS=600V, ID=10A
Drain-Source ON Resistance :
RDS(ON)(Max)=0.69 @VGS=10V
Qg(typ.)= 29.5nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
KF10N60P KF10N60F
Drain-Source Voltage
VDSS
600
Gate-Source Voltage
VGSS
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
10 10*
6 6*
25 25*
400
16.5
4.5
Drain Power
Dissipation
Tc=25
Derate above 25
PD
190
1.52
50
0.4
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
0.65
Thermal Resistance,
Junction-to-Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
2.5
62.5
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
KF10N60P
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
KF10N60F
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
PIN CONNECTION
(KF10N60P, KF10N60F)
D
TO-220IS (1)
G
2008. 11. 12
S
Revision No : 0
1/7
http://www.Datasheet4U.com
KF10N60P/F
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
IDSS VDS=600V, VGS=0V
Vth VDS=VGS, ID=250 A
IGSS VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=5A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=480V, ID=10A
VGS=10V
(Note4,5)
VDD=300V
ID=10A
RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current
Pulsed Source Current
IS
VGS<Vth
ISP
Diode Forward Voltage
VSD IS=10A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr IS=10A, VGS=0V,
Qrr dIs/dt=100A/ s
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =5.5mH, IS=10A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 10A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
MIN. TYP. MAX. UNIT
600 - - V
- 0.6 - V/
- - 10 A
2 - 4V
- - 100 nA
- 0.59 0.69
- 29.5 -
- 6.5 -
- 12.5 -
- 32 -
- 35 -
- 88 -
- 30.5 -
- 1255 -
- 160 -
- 16.5 -
nC
ns
pF
- - 10
A
- - 40
- - 1.4 V
- 350 -
ns
- 4.2 -
C
1
KF10N60
P 801
1
KF10N60
F 813
2
2
1 PRODUCT NAME
2 LOT NO
2008. 11. 12
Revision No : 0
2/7
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